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Autor:
Dean A. Klein
Publikováno v:
IEEE Solid-State Circuits Magazine. 8:16-22
Often taken for granted, solid-state semiconductor memory is the enabler of the contemporary digital world. Today's memory chips pack billions of transistors onto single slivers of silicon and push the boundaries of both packaging and density. In thi
Autor:
Dean A. Klein
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
There is much buzz in the industry today about the “Post Moore's Law” state we are entering. Yet the opportunities for architectural innovation seem more prevalent than ever: 3D integration, advanced packaging solutions, specialized devices with
Autor:
Peter M. Kogge, William Carlson, James H. Laros, Thomas Sterling, Clayton G. Webster, M. Harper Langston, Al Geist, Robert Ross, George Liang-Tai Chiu, James A. Ang, Keren Bergman, Dean Micron Klein, Richard Micron Murphy, Paul W. Coteus, Rick Stevens, Adolfy Hoisie, Laura Carrington, Jon Hiller, Vivek Sarkar, K. H. Kim, Robert Colwell, Robert Schreiber, Erik Debenedictus, Sven Leyffer, Gary Grider, Jeffrey Hittinger, Richard Lethin, Rud Haring, Jack Dongarra, Ron Brightwell, Stefan M. Wild, Robert F. Lucas, Jon Bashor, John Shalf, Shekhar Borkar, William J. Dally
Exascale computing systems are essential for the scientific fields that will transform the 21st century global economy, including energy, biotechnology, nanotechnology, and materials science. Progress in these fields is predicated on the ability to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c838fd56e2c16b6d786d02a931a606
https://doi.org/10.2172/1222713
https://doi.org/10.2172/1222713
A combination of geophysical, geochemical, and geological features suggests that a central part of the Dos Cabezas Mountains probably has considerable potential for blind deposits, chiefly base metals. The area exposes the root zone of a Paleocene( )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4214a7562018ab84bc29d47682f300
https://doi.org/10.3133/b1676
https://doi.org/10.3133/b1676