Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

Autor: Sghaier, N., Trabelsi, M., Yacoubi, N., Bluet, J.M., Souifi, A., Guillot, G., Gaquière, C., DeJaeger, J.C.

Publikováno v: In Microelectronics Journal April 2006 37(4):363-370

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Autor: Lakhdar, Hadhemi, Labat, Nathalie, Curutchet, Arnaud, Defrance, Nicolas, Lesecq, M., Dejaeger, J.C., Malbert, Nathalie

Publikováno v: ESREF 2016
ESREF 2016, Sep 2016, Händel-Halle, Germany
Microelectronics Reliability
Microelectronics Reliability, 2016
Microelectronics Reliability, Elsevier, 2016

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6674abb2f9c59eb3bd4aaf7aaaa09a9a
https://hal.archives-ouvertes.fr/hal-02462684

AlGaN/GaN HEMTs on Resistive Si(111) Substrate: From Material Assessment to RF Power Performances.

Autor: Cordier, Y., Semond, F., Lorenzini, P., Grandjean, N., Natali, F., Damilano, B., Massies, J., Hoël, V., Minko, A., Vellas, N., Gaquière, C., DeJaeger, J.C., Dessertene, B., Cassette, S., Surrugue, M., Adam, D., Grattepain, J.-C., Delage, S.L.

Publikováno v: Physica Status Solidi (C); 2003, Vol. 0 Issue 1, p61-64, 4p

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