Zobrazeno 1 - 1
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pro vyhledávání: '"De-Lang Lin"'
Publikováno v:
AIP Advances, Vol 13, Iss 10, Pp 105217-105217-7 (2023)
Vertical thin-film transistors (V-TFTs) with an InSnO-stabilized ZnO channel were fabricated. The vertical architecture enables devices with submicron channel lengths (≤500 nm) to afford delivering drain current greatly exceeding that of convention
Externí odkaz:
https://doaj.org/article/2edc023b847c4019a2bc0d17c492031b
