Zobrazeno 1 - 7
of 7
pro vyhledávání: '"De-Cheng Hsu"'
Autor:
De-Cheng Hsu, 徐德誠
95
Metal-insulator-semiconductor (MIS) capacitors and n-channel field effect transistors with ZrO2 and La2O3 gate dielectrics were successfully fabricated. The reliability issues such as time dependent dielectric breakdown (TDDB) and static posi
Metal-insulator-semiconductor (MIS) capacitors and n-channel field effect transistors with ZrO2 and La2O3 gate dielectrics were successfully fabricated. The reliability issues such as time dependent dielectric breakdown (TDDB) and static posi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/22538398386354797348
Publikováno v:
Journal of Applied Physics; Oct2010, Vol. 108 Issue 6, p064111, 4p, 3 Graphs
Publikováno v:
Journal of Applied Physics. 108:064111
Metal-oxide-semiconductor capacitors and n-channel metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric were fabricated. The positive bias temperature instability was studied. The degradation of threshold voltage (ΔVT) showe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e49a5cc6cef4496747ada4e669d755c7
https://doi.org/10.1063/1.3482057
https://doi.org/10.1063/1.3482057
Autor:
De-Cheng Hsu, Ying-Lang Wang, Pi-Chun Juan, Ingram Yin-Ku Chang, Ming-Tsong Wang, Joseph Ya-min Lee
Publikováno v:
Applied Physics Letters. 92:202901
The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric was studied. It was observed that the degradation in threshold voltage (ΔVT) has an exponential dependence on the str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca5f57388a32f27233675dc08421b22
https://doi.org/10.1063/1.2928235
https://doi.org/10.1063/1.2928235
Publikováno v:
Journal of Applied Physics. 101:094105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b9cd9ab30c57f81d196323b16ae1306
https://doi.org/10.1063/1.2723861
https://doi.org/10.1063/1.2723861
Autor:
De-Cheng Hsu, Ingram Yin-ku Chang, Ming-Tsong Wang, Pi-Chun Juan, Y. L. Wang, Joseph Ya-min Lee
Publikováno v:
Applied Physics Letters; 5/19/2008, Vol. 92 Issue 20, p202901, 3p, 3 Graphs
Autor:
De-Cheng, Hsu
Thesis (M.A.)--National Tsing Hua University Institute of Electronics Engineering
Non-Latin script record. Includes bibliographical references
Non-Latin script record. Includes bibliographical references