Zobrazeno 1 - 10
of 839
pro vyhledávání: '"De Santi C"'
Autor:
Favero, D., De Santi, C., Mukherjee, K., Borga, M., Geens, K., Chatterjee, U., Bakeroot, B., Decoutere, S., Rampazzo, F., Meneghesso, G., Zanoni, E., Meneghini, M.
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown p
Externí odkaz:
http://arxiv.org/abs/2210.10558
Autor:
Mukherjee, K., De Santi, C., You, S., Geens, K., Borga, M., Decoutere, S., Bakeroot, B., Diehle, P., Altmann, F., Meneghesso, G., Zanoni, E., Meneghini, M.
Publikováno v:
Appl. Phys. Lett. 120, 143501 (2022)
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of G
Externí odkaz:
http://arxiv.org/abs/2207.09948
Autor:
Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., Zanoni, E., Meneghini, M.
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and de-t
Externí odkaz:
http://arxiv.org/abs/2112.09513
Autor:
Marcuzzi, A., Avramenko, M., De Santi, C., Geenen, F., Moens, P., Meneghesso, G., Zanoni, E., Meneghini, M.
Publikováno v:
In Materials Science in Semiconductor Processing July 2024 177
Autor:
Gao, Z., Rampazzo, F., Meneghini, M., De Santi, C., Chiocchetta, F., Marcon, D., Meneghesso, G., Zanoni, E.
Publikováno v:
Microelectronics Reliability, Volume 114, 2020, 113905
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room tem
Externí odkaz:
http://arxiv.org/abs/2107.08413
Publikováno v:
Microelectronics Reliability, Volumes 100-101, 2019, 113489
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then dra
Externí odkaz:
http://arxiv.org/abs/2107.08412
Autor:
Canato, E., Meneghini, M., De Santi, C., Masin, F., Stockman, A., Moens, P., Zanoni, E., Meneghesso, G.
Publikováno v:
Microelectronics Reliability, Volume 114, 2020, 113841
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements sh
Externí odkaz:
http://arxiv.org/abs/2107.05934
Autor:
Ruzzarin, M., Geens, K., Borga, M., Liang, H., You, S., Bakeroot, B., Decoutere, S., De Santi, C., Neviani, A., Meneghini, M., Meneghesso, G., Zanoni, E.
Publikováno v:
Volume 114, November 2020, 113828
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of the p-GaN
Externí odkaz:
http://arxiv.org/abs/2104.00939
Publikováno v:
In Microelectronics Reliability November 2023 150
Autor:
Caria, A., Fraccaroli, R., Pierobon, G., Castellaro, T., Mura, G., Ricci, P.C., De Santi, C., Buffolo, M., Trivellin, N., Zanoni, E., Meneghesso, G., Meneghini, M.
Publikováno v:
In Microelectronics Reliability November 2023 150