Zobrazeno 1 - 10
of 2 176
pro vyhledávání: '"De Santi, C."'
Autor:
Fabiani, Ernesto
Publikováno v:
Il Foro Italiano, 1997 Dec 01. 120(12), 3703/3704-3715/3716.
Externí odkaz:
https://www.jstor.org/stable/23191797
Autor:
Favero, D., De Santi, C., Mukherjee, K., Borga, M., Geens, K., Chatterjee, U., Bakeroot, B., Decoutere, S., Rampazzo, F., Meneghesso, G., Zanoni, E., Meneghini, M.
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown p
Externí odkaz:
http://arxiv.org/abs/2210.10558
Autor:
Mukherjee, K., De Santi, C., You, S., Geens, K., Borga, M., Decoutere, S., Bakeroot, B., Diehle, P., Altmann, F., Meneghesso, G., Zanoni, E., Meneghini, M.
Publikováno v:
Appl. Phys. Lett. 120, 143501 (2022)
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of G
Externí odkaz:
http://arxiv.org/abs/2207.09948
Autor:
De Martini, Angelo
Publikováno v:
Il Foro Italiano, 1957 Jan 01. 80, 35/36-43/44.
Externí odkaz:
https://www.jstor.org/stable/23146620
Publikováno v:
Il Foro Italiano, 1934 Jan 01. 59, 411/412-417/418.
Externí odkaz:
https://www.jstor.org/stable/23129701
Publikováno v:
Il Foro Italiano, 1914 Jan 01. 39, 1181/1182-1183/1184.
Externí odkaz:
https://www.jstor.org/stable/23115387
Publikováno v:
Il Foro Italiano, 1915 Jan 01. 40, 1211/1212-1215/1216.
Externí odkaz:
https://www.jstor.org/stable/23117272
Autor:
Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., Zanoni, E., Meneghini, M.
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and de-t
Externí odkaz:
http://arxiv.org/abs/2112.09513
Autor:
Marcuzzi, A., Avramenko, M., De Santi, C., Geenen, F., Moens, P., Meneghesso, G., Zanoni, E., Meneghini, M.
Publikováno v:
In Materials Science in Semiconductor Processing July 2024 177
Autor:
Gao, Z., Rampazzo, F., Meneghini, M., De Santi, C., Chiocchetta, F., Marcon, D., Meneghesso, G., Zanoni, E.
Publikováno v:
Microelectronics Reliability, Volume 114, 2020, 113905
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room tem
Externí odkaz:
http://arxiv.org/abs/2107.08413