Zobrazeno 1 - 10
of 108
pro vyhledávání: '"De Roest, D."'
Autor:
Verdonck, P., Aresti, M., Ferchichi, A., Van Besien, E., Stafford, B., Trompoukis, C., De Roest, D., Baklanov, M.
Publikováno v:
In Microelectronic Engineering 2011 88(5):627-630
Publikováno v:
Microelectronics International: An International Journal, 2003, Vol. 20, Issue 3, pp. 41-44.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/13565360310487945
Autor:
De Roest, D., Travaly, Y., Beynet, J., Sprey, H., Labat, J., Huffman, C., Verdonck, P., Kaneko, S., Matsushita, K., Kobayashi, N., Beyer, G.
Publikováno v:
In Microelectronic Engineering 2010 87(3):311-315
Publikováno v:
In Microelectronic Engineering 2002 60(1):31-37
Autor:
Donaton, R.A. *, Coenegrachts, B., Maenhoudt, M., Pollentier, I., Struyf, H., Vanhaelemeersch, S., Vos, I., Meuris, M., Fyen, W., Beyer, G., Tokei, Z., Stucchi, M., Vervoort, I., De Roest, D., Maex, K.
Publikováno v:
In Microelectronic Engineering 2001 55(1):277-283
Publikováno v:
Radioengineering, Vol 12, Iss 4, Pp 21-25 (2003)
Radioengineering. 2003, vol. 12, č. 4, s. 21-25. ISSN 1210-2512
Radioengineering. 2003, vol. 12, č. 4, s. 21-25. ISSN 1210-2512
The goal of this work was to model the influence of the substrate skin effects on the distributed mutual impedance per unit length parameters of multiple coupled on-chip interconnects. The proposed analytic model is based on the frequency-dependent d
Akademický článek
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Autor:
Demuynck, S., Kim, H., Huffman, C., Darnon, Maxime, Struyf, H., Versluijs, J., Claes, M., Vereecke, G., Verdonck, P., Volders, H., Heylen, N., Kellens, K., De Roest, D., Sprey, H., Beyer, G.
Publikováno v:
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, 2009, 48, April 2009, 04C018
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2009, 48, April 2009, 04C018
Japanese Journal of Applied Physics, 2009, 48, April 2009, 04C018
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2009, 48, April 2009, 04C018
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a249f6f0dbce423c384233ed69ca0138
https://hal.science/hal-00625298
https://hal.science/hal-00625298
Autor:
Papanikolaou, A., Miranda, M., Catthoor, F., Corporaal, H., Man, de, H., de Roest, D., Stucchi, M., Maex, K.
Publikováno v:
Proceedings of International Workshop on System-level interconnect prediction, April 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::814f936ce0166e8d44d2424243f74f04
https://research.tue.nl/nl/publications/df9ad377-f3f1-414a-83e1-ac77cce168c5
https://research.tue.nl/nl/publications/df9ad377-f3f1-414a-83e1-ac77cce168c5
Publikováno v:
Radioengineering. 2002, vol. 11, č. 1, s. 1-5. ISSN 1210-2512
In this paper, a method for analysis and modeling of coplanar transmission interconnect lines that are placed on top of silicon-silicon oxide substrates is presented. The potential function is expressed by series expansions in terms of solutions of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2852::ba0c6ac6a3990b27bd42132d7752a1aa
https://hdl.handle.net/11012/58134
https://hdl.handle.net/11012/58134