Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy.

Autor: Shibli, S. M., Tamargo, M. C., De Miguel, J. L., Skromme, B. J., Nahory, R. E., Farrell, H. H.

Publikováno v: Journal of Applied Physics; 11/1/1989, Vol. 66 Issue 9, p4295, 6p

Collarín para soportes metálicos

Autor: de Miguel, J. L.

Publikováno v: Informes de la Construcción; Vol. 50 No. 456-457 (1998); 81-87
Informes de la Construcción; Vol. 50 Núm. 456-457 (1998); 81-87
Informes de la Construcción
Consejo Superior de Investigaciones Científicas (CSIC)

In architectural works, structural calculations are usually few and simple, they mostly corroborate what is already known. Calculations are made for the most part with the purpose of exploring solutions. When working in a specific case operations oug

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::3c234dff24a7b660e43c0f9cd3439576
https://informesdelaconstruccion.revistas.csic.es/index.php/informesdelaconstruccion/article/view/889

SiH4 doping of MBE GaAs and AlxGa1-xAs.

Autor: Briones, F., Golmayo, D., González, L., de Miguel, J. L.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1985, Vol. 3 Issue 2, p568-571, 4p

Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48 As quantum wells.

Autor: de Miguel, J. L., Meynadier, M.-H., Tamargo, M. C., Nahory, R. E., Hwang, D. M.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1988, Vol. 6 Issue 2, p617-619, 3p

Planar doping with gallium of molecular beam epitaxial ZnSe.

Autor: de Miguel, J. L., Shibli, S. M., Tamargo, M. C., Skromme, B. J.

Publikováno v: Applied Physics Letters; 11/21/1988, Vol. 53 Issue 21, p2065, 3p