Real-time photonic blind interference cancellation.

Autor: Lederman JC; Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA. jlederman@princeton.edu., Zhang W; Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA., de Lima TF; Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA.; NEC Laboratories America, Princeton, NJ, 08540, USA., Blow EC; Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA.; NEC Laboratories America, Princeton, NJ, 08540, USA., Bilodeau S; Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA., Shastri BJ; Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston, ON, K7L 3N6, Canada., Prucnal PR; Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA.

Publikováno v: Nature communications [Nat Commun] 2023 Dec 11; Vol. 14 (1), pp. 8197. Date of Electronic Publication: 2023 Dec 11.

Roadmap on emerging hardware and technology for machine learning.

Autor: Berggren K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America., Xia Q; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America., Likharev KK; Stony Brook University, Stony Brook, NY 11794, Unites States., Strukov DB; Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106, United States of America., Jiang H; School of Engineering & Applied Science Yale University, CT, United States of America., Mikolajick T; NaMLab gGmbH and TU Dresden, Germany., Querlioz D; Université Paris-Saclay, CNRS, France., Salinga M; Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Germany., Erickson JR; Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America., Pi S; Lam Research, Fremont, CA, United States of America., Xiong F; Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America., Lin P; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America., Li C; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, China., Chen Y; School of information science and technology, Fudan University, Shanghai, People's Republic of China., Xiong S; School of information science and technology, Fudan University, Shanghai, People's Republic of China., Hoskins BD; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., Daniels MW; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., Madhavan A; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, United States of America., Liddle JA; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., McClelland JJ; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., Yang Y; School of Electronics Engineering and Computer Science, Peking University, Beijing, People's Republic of China., Rupp J; Department of Materials Science and Engineering and Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.; Electrochemical Materials, ETHZ Department of Materials, Hönggerbergring 64, Zürich 8093, Switzerland., Nonnenmann SS; Department of Mechanical & Industrial Engineering, University of Massachusetts-Amherst, MA, United States of America., Cheng KT; School of Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China., Gong N; IBM T J Watson Research Center, Yorktown Heights, NY 10598, United States of America., Lastras-Montaño MA; Instituto de Investigación en Comunicación Óptica, Facultad de Ciencias, Universidad Autónoma de San Luis Potosí, México., Talin AA; Sandia National Laboratories, Livermore, CA 94551, United States of America., Salleo A; Department of Materials Science and Engineering, Stanford University, Stanford, California, United States of America., Shastri BJ; Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston ON KL7 3N6, Canada., de Lima TF; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America., Prucnal P; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America., Tait AN; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America., Shen Y; Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America., Meng H; Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America., Roques-Carmes C; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America., Cheng Z; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China., Bhaskaran H; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom., Jariwala D; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia PA 19104, United States of America., Wang H; University of Southern California, Los Angeles, CA 90089, United States of America., Shainline JM; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America., Segall K; Department of Physics and Astronomy, Colgate University, NY 13346, United States of America., Yang JJ; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America., Roy K; School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States of America., Datta S; University of Notre Dame, Notre Dame, IN 46556, United States of America., Raychowdhury A; Georgia Institute of Technology, Atlanta, GA 30332, United States of America.

Publikováno v: Nanotechnology [Nanotechnology] 2021 Jan 01; Vol. 32 (1), pp. 012002.

Lateral bipolar junction transistor on a silicon photonics platform.

Autor: Jha A, de Lima TF, Saeidi H, Bilodeau S, Tait AN, Huang C, Abbaslou S, Shastri B, Prucnal PR

Publikováno v: Optics express [Opt Express] 2020 Apr 13; Vol. 28 (8), pp. 11692-11704.

Photonic principal component analysis using an on-chip microring weight bank.

Autor: Ma PY, Tait AN, de Lima TF, Abbaslou S, Shastri BJ, Prucnal PR

Publikováno v: Optics express [Opt Express] 2019 Jun 24; Vol. 27 (13), pp. 18329-18342.

Feedback control for microring weight banks.

Autor: Tait AN, Jayatilleka H, De Lima TF, Ma PY, Nahmias MA, Shastri BJ, Shekhar S, Chrostowski L, Prucnal PR

Publikováno v: Optics express [Opt Express] 2018 Oct 01; Vol. 26 (20), pp. 26422-26443.