Zobrazeno 1 - 10
of 100
pro vyhledávání: '"De Lima, F. A. P."'
Publikováno v:
Phys. Rev. B 110, 035111 (2024)
The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, Pt$_2$HgSe$_3$ na
Externí odkaz:
http://arxiv.org/abs/2405.06861
In recent years, synthesis and experimental research of fractalized materials has evolved in a paradigmatic crossover with topological phases of matter. We present here a theoretical investigation of the helical edge transport in Sierpinski carpets (
Externí odkaz:
http://arxiv.org/abs/2401.16014
Publikováno v:
Phys. Rev. B 109, 085142 (2024)
Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored interfaces b
Externí odkaz:
http://arxiv.org/abs/2311.11084
Publikováno v:
Phys. Chem. Chem. Phys., 2023
2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through {\it ab initio} calculations, we investigated freestanding and SiC-supported A
Externí odkaz:
http://arxiv.org/abs/2307.00138
Publikováno v:
J. Phys. Chem. C 127, 17556 (2023)
Currently, solid interfaces composed of two-dimensional materials (2D) in contact with metal surfaces (m-surf) have been the subject of intense research, where the borophene bilayer (BBL) has been considered a prominent material for the development o
Externí odkaz:
http://arxiv.org/abs/2305.06318
Publikováno v:
J. Phys. Chem. C 2023
Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the insulating SiC sub
Externí odkaz:
http://arxiv.org/abs/2302.05475
Publikováno v:
2023 2D Mater. 10 035001
Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms s
Externí odkaz:
http://arxiv.org/abs/2212.05863
Autor:
de Lima, F. Crasto, Fazzio, Adalberto
Vacancies in materials structure -- lowering its atomic density -- take the system closer to the atomic limit, to which all systems are topologically trivial. Here we show a mechanism of mediated interaction between vacancies inducing a topologically
Externí odkaz:
http://arxiv.org/abs/2109.11915
Autor:
Focassio, Bruno, Schleder, Gabriel R., de Lima, F. Crasto, Lewenkopf, Caio, Fazzio, Adalberto
Publikováno v:
Phys. Rev. B 104, 214206 (2021)
Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale syn
Externí odkaz:
http://arxiv.org/abs/2109.10858
Autor:
Petry, Romana, Silvestre, Gustavo, Focassio, Bruno, de Lima, F. Crasto, Miwa, Roberto H., Fazzio, Adalberto
Publikováno v:
Langmuir 38, 1124 (2022)
Understanding the role of microscopic attributes in nanocomposites allows for a controlled and, therefore, acceleration in experimental system designs. In this work, we extracted the relevant parameters controlling the graphene oxide binding strength
Externí odkaz:
http://arxiv.org/abs/2107.01040