Infrared analysis of the precipitated oxide phase in silicon and germanium

Autor: De Gryse, O., Vanmeerbeek, P., Vanhellemont, J., Clauws, P.

Publikováno v: In Physica B: Physics of Condensed Matter 2006 376:113-116

A model for the formation of lattice defects at silicon oxide precipitates in silicon

Autor: Vanhellemont, J. ^*, De Gryse, O., Clauws, P.

Publikováno v: In Physica B: Physics of Condensed Matter 31 December 2003 340-342:1056-1060

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

Autor: Simoen, E. ^*, Claeys, C., Loo, R., De Gryse, O., Clauws, P., Job, R., Ulyashin, A.G., Fahrner, W.

Publikováno v: In Materials Science & Engineering B 2003 102(1):207-212

Characterization of bulk microdefects in Ge single crystals.

Autor: Poelman, D., De Gryse, O., De Roo, N., Janssens, O., Clauws, P., Bras, W., Dolbnya, I.P., Romandic, I.

Publikováno v: Journal of Applied Physics; 12/1/2004, Vol. 96 Issue 11, p6164-6168, 5p, 1 Diagram, 3 Graphs

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Autor: De Gryse, O., Clauws, P., Vanhellemont, J., Lebedev, Oleg, van Landuyt, Joseph, Simoen, E., Claeys, C.

Publikováno v: Proceedings of the 7th International Symposium on High Purity Silicon held at the 202nd Meeting of the Electrochemical Society, October 20-25, 2002, Salt Lake City, Utah

Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2097::040b53d998172787930c74d913e8d6ba
https://hdl.handle.net/10067/949500151162165141