Výsledky vyhledávání - "De Graaff, H.C."

Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

Autor: Lunenborg, M.M., de Graaff, H.C., Mouthaan, A.J., Verweij, J.F.

Publikováno v: Microelectronics reliability, 36(11/12), 1667-1670. Elsevier

The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7/spl mu/m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::812dc0d55ef15d3df356c14afae2f408
https://doi.org/10.1016/0026-2714(96)00170-9

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An empirical model for early resistance changes due to electromigration

Autor: Niehof, J., de Graaff, H.C., Mouthaan, A.J., Verweij, J.F.

Publikováno v: Solid-state electronics, 38(10), 1817-1827. Elsevier

A new heuristic description for electromigration-induced early resistance changes is given. The basis is formed by two coupled partial differential equations, one for vacancies, and one for imperfections. These equations are solved numerically for a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daad2c5c16a309e2d900cd63eedb99bc
https://doi.org/10.1016/0038-1101(94)00285-n

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Electromigration, can we understand it?

Autor: Mouthaan, A.J., Petrescu, V., de Graaff, H.C., Verweij, J.F.

Publikováno v: Proceedings of the Ninth International School on Condensed Matter Physics, 200-201
STARTPAGE=200;ENDPAGE=201;TITLE=Proceedings of the Ninth International School on Condensed Matter Physics

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::5d745c87f0e01cca865e42d77f6e4882
https://research.utwente.nl/en/publications/electromigration-can-we-understand-it(ac01a765-eda8-4ce9-bdf8-ff98ada2da3c).html

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A new method for calculating the propagation delay in CML bipolar switching

Autor: Tinti, R., de Graaff, H.C., Klinkenberg, E., Wassenaar, R.F., Tauritz, J.L.

Publikováno v: Proceedings of the 26th European Solid State Device Research Conference (ESSDERC'96), 653-656
STARTPAGE=653;ENDPAGE=656;TITLE=Proceedings of the 26th European Solid State Device Research Conference (ESSDERC'96)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::dd0a187e4296d2486d74d4e2fd1bb386
https://research.utwente.nl/en/publications/9453d744-a280-4d11-a3ca-f71c40bb0a11

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Modelling of electromigration with a focus on the early stages

Autor: Mouthaan, A.J., Petrescu, V., de Graaff, H.C., Verweij, J.F.

Publikováno v: Proceedings of the fifth International Conference on Simulation of Devices and Technologies-ICSDT'96, 48-57
STARTPAGE=48;ENDPAGE=57;TITLE=Proceedings of the fifth International Conference on Simulation of Devices and Technologies-ICSDT'96

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::3d53e1a90f3f217a936c3f9ec8af0637
https://research.utwente.nl/en/publications/modelling-of-electromigration-with-a-focus-on-the-early-stages(e6f9da94-714e-4f6a-b9d4-bfdfd804548b).html

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Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structures

Autor: Krabbenborg, B.H., Bosma, A., de Graaff, H.C., Mouthaan, A.J.

Publikováno v: IEEE transactions on computer-aided design of integrated circuits and systems, 15(7), 765-774. IEEE

In this paper, a method is proposed for extraction of coupled networks from layout information for simulation of electrothermal device behavior. The networks represent a three-dimensional (3-D) device structure with circuit elements. The electrical a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b46465170ed8747c580603942f8e20f
https://research.utwente.nl/en/publications/5e2b0068-4502-48a5-81a3-83f539e13934

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Fast transient ESD simulation of the NMOS protection transistor

Autor: Luchies, J.R.M., Verhaege, K., Kuper, F.G., Mouthaan, A.J., de Graaff, H.C.

Publikováno v: Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95, 307-310
STARTPAGE=307;ENDPAGE=310;TITLE=Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::414412c6e1f867e2a8da5157289e0b79
https://research.utwente.nl/en/publications/3ded6dd0-5978-4fe7-8b2b-2b8daa6d9a1c

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Anomalous NMOSFET substrate current behavior at accelerated hot-carrier stress conditions

Autor: Lunenborg, M.M., de Graaff, H.C., Mouthaan, A.J., Verweij, J.F.

Publikováno v: Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95, 813-816
STARTPAGE=813;ENDPAGE=816;TITLE=Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::e81aca8f290b4ce700d910cbcdaa4e8a
https://research.utwente.nl/en/publications/abb56d1b-04f7-4ae0-90dd-a45996586108

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Layout optimalisation for bipolar power transistors

Autor: Mouthaan, A.J., van der Scheer, A.B., Boezen, H., Krabbenborg, B.H., de Graaff, H.C.

Publikováno v: Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95, 389-392
STARTPAGE=389;ENDPAGE=392;TITLE=Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::59f4e53b61f8a17dcee64755c8acff7f
https://research.utwente.nl/en/publications/1719ea2d-77de-43cf-aceb-b4358f68bdfd

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