Zobrazeno 1 - 10
of 407
pro vyhledávání: '"De Franceschi, S"'
Autor:
Bédécarrats, T., Paz, B. Cardoso, Diaz, B. Martinez, Niebojewski, H., Bertrand1, B., Rambal, N., Comboroure, C., Sarrazin, A., Boulard, F., Guyez, E., Hartmann, J. -M., Morand, Y., Magalhaes-Lucas, A., Nowak, E., Catapano, E., Cassé, M., Urdampilleta, M., Niquet, Y. -M., Gaillard, F., De Franceschi, S., Meunier, T., Vinet, M.
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 1-4
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange intera
Externí odkaz:
http://arxiv.org/abs/2304.03721
Autor:
Jacquinot, H., Maurand, R., Bada, G. Troncoso Fernandez, Bertrand, B., Cassé, M., Niquet, Y. M., de Franceschi, S., Meunier, T., Vinet, M.
In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties)
Externí odkaz:
http://arxiv.org/abs/2304.03705
Autor:
Piot, N., Brun, B., Schmitt, V., Zihlmann, S., Michal, V. P., Apra, A., Abadillo-Uriel, J. C., Jehl, X., Bertrand, B., Niebojewski, H., Hutin, L., Vinet, M., Urdampilleta, M., Meunier, T., Niquet, Y. -M., Maurand, R., De Franceschi, S.
Publikováno v:
Nature Nanotechnology 17, 1072-1077 (2022)
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to
Externí odkaz:
http://arxiv.org/abs/2201.08637
Autor:
Guevel, L. Le, Billiot, G., De Franceschi, S., Morel, A., Jehl, X., Jansen, A. G. M., Pillonnet, G.
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMO
Externí odkaz:
http://arxiv.org/abs/2102.04364
Publikováno v:
Nature Electronics 4, 872, 2021
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance,
Externí odkaz:
http://arxiv.org/abs/2011.11753
Autor:
Le Guevel, L., Billiot, G., De Franceschi, S., Morel, A., Jehl, X., Jansen, A.G.M., Pillonnet, G.
Publikováno v:
In Chip December 2023 2(4)
Autor:
Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. -Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. -M., De Franceschi, S., Urdampilleta, M., Meunier, T., Vinet, M.
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM)
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based reado
Externí odkaz:
http://arxiv.org/abs/1912.10884
Autor:
Vinet, M., Hutin, L., Bertrand, B., Barraud, S., Hartmann, J. -M., Kim, Y. -J., Mazzocchi, V., Amisse, A., Bohuslavskyi, H., Bourdet, L., Crippa, A., Jehl, X., Maurand, R., Niquet, Y. -M., Sanquer, M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P. -A., Spence, C., Urdampilleta, M., De Franceschi, S., Meunier, T.
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the b
Externí odkaz:
http://arxiv.org/abs/1912.09807
Autor:
Hutin, L., Maurand, R., Kotekar-Patil, D., Corna, A., Bohuslavskyi, H., Jehl, X., Barraud, S., De Franceschi, S., Sanquer, M., Vinet, M.
Publikováno v:
2016 IEEE Symposium on VLSI Technology
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a h
Externí odkaz:
http://arxiv.org/abs/1912.09805
Autor:
Hutin, L., Bourdet, L., Bertrand, B., Corna, A., Bohuslavskyi, H., Amisse, A., Crippa, A., Maurand, R., Barraud, S., Urdampilleta, M., Bäuerle, C., Meunier, T., Sanquer, M., Jehl, X., De Franceschi, S., Niquet, Y. -M., Vinet, M.
Publikováno v:
2018 IEEE Symposium on VLSI Technology
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI
Externí odkaz:
http://arxiv.org/abs/1912.09806