Zobrazeno 1 - 10
of 25
pro vyhledávání: '"De Ceuster, D."'
Autor:
Schultz-Wittmann, O., Turner, A., Eggleston, B., De Ceuster, D., Suwito, D., Van Kerschaver, E., Baker-Finch, S., Prajapati, V.
32nd European Photovoltaic Solar Energy Conference and Exhibition; 456-459
First Solar has launched mass production of high-efficiency crystalline silicon solar cells. The manufacturing sequence employs a new technology that eliminates recombina
First Solar has launched mass production of high-efficiency crystalline silicon solar cells. The manufacturing sequence employs a new technology that eliminates recombina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a46a36fb0a69b744a1c03e5448765c
Autor:
Schultz-Wittmann, O., De Ceuster, D., Turner, A., Crafts, D., Ong, R., Suwito, D., Eggleston, B., Prajapati, V., Kleiman, A., Bhatt, K.
28th European Photovoltaic Solar Energy Conference and Exhibition; 1004-1007
Despite significant carrier lifetime advantages, phosphorus doped n-type silicon has not yet replaced boron doped ptype silicon as the preferred base material for cryst
Despite significant carrier lifetime advantages, phosphorus doped n-type silicon has not yet replaced boron doped ptype silicon as the preferred base material for cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbc5ed052519f49f82d179c723499e91
Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
Autor:
Flandre, Denis, Colinge, J. P, Chen, J, De Ceuster, D, Eggermont, J. P, Ferreira, L, Gentinne, B, Jespers, Paul, Viviani, A, Gillon, R, Raskin, J. P, Vander Vorst, A, Valiente, Gabriel, Silveira, Fernando
Publikováno v:
COLIBRI
Universidad de la República
instacron:Universidad de la República
Universidad de la República
instacron:Universidad de la República
This paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well-known reduction of parasitic capacitances due to dielectric isola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::2cd818f845652f6a4daeb7f763543d58
Akademický článek
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Autor:
Flandre, D., Colinge, J., Chen, J., De Ceuster, D., Eggermont, J., Ferreira, L., Gentinne, B., Jespers, P., Viviani, A., Gillon, R., Raskin, J., Vander Vorst, A., Vanhoenacker-Janvier, D., Silveira, F.
Publikováno v:
Analog Integrated Circuits & Signal Processing; Dec1999, Vol. 21 Issue 3, p213-228, 16p
Publikováno v:
IEEE Journal of Solid-State Circuits; 1996, Vol. 31 Issue 2, p179-186, 8p
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 09/01/1994, Vol. 30 Issue 18, p1543-1545, 3p
Autor:
De Ceuster, D., Flandre, D.
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 08/18/1994, Vol. 30 Issue 17, p1456-1458, 3p
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 09/12/1996, Vol. 32 Issue 19, p1834-1835, 2p
Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors.
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 02/15/1996, Vol. 32 Issue 4, p278-279, 2p