Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Dayward Santos"'
Autor:
Joel C. Wong, Haw Y. Tai, Helen Fung, D. Regan, D. F. Brown, Dayward Santos, Eric M. Prophet, Shawn D. Burnham, Miroslav Micovic, A. Kurdoghlian, Jesus Magadia, Isaac Khalaf, Yan Tang, Bob Grabar
Publikováno v:
IEEE Electron Device Letters. 38:1708-1711
We report the state-of-the-art $V$ -band power performance of a scaled 40-nm gate length Al0.23Ga0.77N/AlN/GaN/Al0.08Ga0.92N double heterojunction field effect transistor (DHFET). The $200~\mu \text{m}$ ( $4\times 50 ~\mu \text{m}$ ) wide GaN DHFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f0e2db75cf2de7515da41fefbef6647
https://doi.org/10.1109/led.2017.2763940
https://doi.org/10.1109/led.2017.2763940
Autor:
David F. Brown, Miroslav Micovic, Dayward Santos, Jesus Magadia, R. Bowen, Shawn D. Burnham, Robert Grabar, Joe Tai, Isaac Khalaf
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:480-485
HRL’s T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6192ed1cc0d83bcc42f81e02568f8095
https://doi.org/10.1109/tsm.2017.2748921
https://doi.org/10.1109/tsm.2017.2748921
Autor:
Joe Tai, Joel C. Wong, Helen Fung, Hector L. Bracamontes, Eric M. Prophet, David F. Brown, A. Kurdoghlian, D. Regan, C. McGuire, Miroslav Micovic, Dayward Santos, Shawn D. Burnham, Adele E. Schmitz, Herrault Florian G, Isaac Khalaf, Yan Tang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process. These highly scaled GaN devices have 5 times higher brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0619ddec3291dba53fc3e0a76909659d
https://doi.org/10.1109/iedm.2016.7838337
https://doi.org/10.1109/iedm.2016.7838337
Autor:
Isaac Khalaf, Yan Tang, Joel Wong, Miroslav Micovic, Eric M. Prophet, Joe Tai, Dayward Santos, Helen Fung, Charles McGuire, David F. Brown, Shawn D. Burnham, A. Kurdoghlian, Adele E. Schmitz, Herrault Florian G, Robert Grabar, Hector L. Bracamontes, D. Regan
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a502bdc7477f683fa90c3e2669a53bb
https://doi.org/10.1109/csics.2016.7751051
https://doi.org/10.1109/csics.2016.7751051
Autor:
Isaac Khalaf, Helen Fung, Miroslav Micovic, Joe Tai, Dayward Santos, Jesus Magadia, Robert Grabar, David F. Brown, A. Kurdoghlian
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report MMIC traveling-wave amplifiers (TWAs) fabricated using a 40 nm GaN double heterostructure FET (DHFET) technology. By varying the gate periphery within cascode gain stages, we produced a family of TWA designs with a range of gain and bandwid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d3fa95fac6e69a84e2663fb25ed3a81
https://doi.org/10.1109/csics.2016.7751031
https://doi.org/10.1109/csics.2016.7751031
Autor:
David F. Brown, Adam J. Williams, Keisuke Shinohara, Michael Johnson, Dayward Santos, Thomas C. Oh, Joel C. Wong, Shawn D. Burnham, John F. Robinson, C. Butler, Robert Grabar, Rongming Chu, S. Kim, Daniel Zehnder, Miroslav Micovic, Ivan Alvarado-Rodriguez, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 34:1118-1120
We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5525cdf8d7f6c5a7ffd26d186fe5dc4
https://doi.org/10.1109/led.2013.2273172
https://doi.org/10.1109/led.2013.2273172