Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Dayanand Kumar"'
Autor:
Dayanand Kumar, Hanrui Li, Dhananjay D. Kumbhar, Manoj Kumar Rajbhar, Uttam Kumar Das, Abdul Momin Syed, Georgian Melinte, Nazek El-Atab
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-17 (2024)
Highlights A novel optoelectronic synapse compatible with existing chip technology is demonstrated. This device excels in mimicking memory and learning functions using light, making it ideal for future neuromorphic computing in biomedicine. Our desig
Externí odkaz:
https://doaj.org/article/ddc261e13c554d3da011dddb8b22ba09
Autor:
Ayman Rezk, Md. Hasan Raza Ansari, Kayaramkodath Chandran Ranjeesh, Safa Gaber, Dayanand Kumar, Areej Merhi, Bilal R. Kaafarani, Mohamed Ben Hassine, Nazek El-Atab, Dinesh Shetty, Ammar Nayfeh
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inheren
Externí odkaz:
https://doaj.org/article/3e5c02e67c064a6fa710039c3a59be11
Autor:
Dayanand Kumar, Hanrui Li, Dhananjay D. Kumbhar, Manoj Kumar Rajbhar, Uttam Kumar Das, Abdul Momin Syed, Georgian Melinte, Nazek El-Atab
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/cac447bc9e9d4bc5bd1a4e75f8970b7a
Autor:
Awais Zaka, Sabina Abdul Hadi, Pratibha Pal, Dayanand Kumar, Nazek El-Atab, Saeed Alhassan, Ammar Nayfeh
Publikováno v:
APL Materials, Vol 12, Iss 3, Pp 031117-031117-7 (2024)
In this work, physics based optical modeling is carried out using iron disulfide thin films deposited by using a plasma-assisted, radio frequency-powered technique. Iron disulfide is a transition metal dichalcogenide material, exhibiting a variety of
Externí odkaz:
https://doaj.org/article/0d19d424820449af81c28440e32b9ff2
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-12 (2023)
Abstract Optoelectronic devices are advantageous in in-memory light sensing for visual information processing, recognition, and storage in an energy-efficient manner. Recently, in-memory light sensors have been proposed to improve the energy, area, a
Externí odkaz:
https://doaj.org/article/64b8576f7ff64f13b86979da00867ef6
Publikováno v:
IEEE Access, Vol 8, Pp 91648-91652 (2020)
Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the tran
Externí odkaz:
https://doaj.org/article/1fa6bc2871b443fc956c35bf5a4cd761
Publikováno v:
International Journal of Anatomy Radiology and Surgery, Vol 7, Iss 3, Pp RO07-RO11 (2018)
Introduction: Acute pancreatitis is a disease with high rate of morbidity and mortality and is known to run an unpredictable course. CT is the standard non invasive investigation to evaluate pancreatic parenchymal changes, peri pancreatic changes
Externí odkaz:
https://doaj.org/article/2cabf1eb6f624da5a23fb62713e4bef7
Autor:
Dayanand Kumar, 古大亞
106
In this thesis, the improvement of reliability in the transition metal oxide (TMO) based conductive bridge random access memory (CBRAM) device was investigated. In the first part, we fabricated the SiCN/Al2O3 double layer CBRAM device for un
In this thesis, the improvement of reliability in the transition metal oxide (TMO) based conductive bridge random access memory (CBRAM) device was investigated. In the first part, we fabricated the SiCN/Al2O3 double layer CBRAM device for un
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/y2k6eq
Publikováno v:
ECS Transactions. 111:187-190
In this work, we investigate solution processable MoS2 based MOS (metal oxide semiconductor) capacitor device for data storage and in-memory light sensing. The MOS capacitor exhibits a good memory window of about 2.5 V with the operating voltage of +
Publikováno v:
IEEE Transactions on Electron Devices. 70:1351-1358