Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Day Shan Liu"'
Publikováno v:
Materials Research Express, Vol 8, Iss 12, p 126201 (2021)
In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p -type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p -GaN epilayer was obstructed as the
Externí odkaz:
https://doaj.org/article/9504f6193093441daeb715c3f3586299
Publikováno v:
Applied optics. 61(21)
In this study, we demonstrate a method to fabricate a guided-mode resonance (GMR) device on a flexible and transparent low-density polyethylene (LDPE) film and present the measurement results of this device as a pressure sensor. A simple thermal-nano
Publikováno v:
Coatings; Volume 12; Issue 11; Pages: 1671
In this study, a thin silver (Ag) layer was evaporated onto the anatase-titanium oxide (TiOx) film. This structure was then annealed at various temperatures under nitrogen ambient to realize the Ag nanoparticles formed on the TiOx surface. The photoc
Publikováno v:
Materials
Materials, Vol 14, Iss 5474, p 5474 (2021)
Volume 14
Issue 19
Materials, Vol 14, Iss 5474, p 5474 (2021)
Volume 14
Issue 19
Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga2O3) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN
Publikováno v:
Applied Sciences, Vol 7, Iss 1, p 56 (2017)
The gas barrier property of a silicon oxide (SiOx) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the gl
Externí odkaz:
https://doaj.org/article/b4fadd8a09204c0d96271a666b06b685
Autor:
Wei-Hua Hsiao, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jyun-Yong Li, Hong-Jyun Lin, Nan-Jay Wu, Day-Shan Liu
Publikováno v:
Applied Sciences, Vol 6, Iss 2, p 60 (2016)
Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of t
Externí odkaz:
https://doaj.org/article/4ef2c355e465489a86ce6bd9bb0134eb
Autor:
Shun-Chi Chen, Sheng-Fu Lin, Day-Shan Liu, Chun-Hao Chang, Hua-Wen Liu, Tai-Hong Chen, Yong-Ji Su
Publikováno v:
Microsystem Technologies. 24:4149-4158
In this study, silicon oxynitride (SiOxNy) films and three-paired organosilicon/SiOxNy multilayered structures prepared by the plasma-enhanced chemical vapor deposition were respectively deposited onto the polyethylene terephthalate and silicon subst
Autor:
Jin-How Chang, Tai-Hong Chen, Tsung-Hsin Lee, Zheng-Wen Xu, Day-Shan Liu, Yu-Kai Zhang, Pei-Yu Li
Publikováno v:
Materials
Volume 11
Issue 7
Materials, Vol 11, Iss 7, p 1089 (2018)
Volume 11
Issue 7
Materials, Vol 11, Iss 7, p 1089 (2018)
In this work, the surface morphology of a hydrophobic organosilicon film was modified as it was deposited onto a silver seed layer with nanoparticles. The surface hydrophobicity evaluated by the water contact angle was significantly increased from 10
Autor:
Tai-Hong Chen, Tsung-Hsin Lee, Zheng-Wen Xu, Jin-How Chang, Day-Shan Liu, Yu-Kai Zhang, Pei-Yu Li
Publikováno v:
2018 IEEE International Conference on Applied System Invention (ICASI).
In this work, a silver seed layer was deposited onto the silicon substrate prior to the deposition of the organosilicon film with the hydrophobic surface. Nanoparticle structures of the seed layer were formed after a post-annealing treatment. The sur
Publikováno v:
Microelectronic Engineering. 148:5-9
In this study, a rapid, cost-effective, and room-temperature achieved selectively photochemical etching (SPCE) process was developed to improve the photocatalytic activity of a PECVD-deposited amorphous titanium oxide (a-TiOx) film. The a-TiOx film t