Výsledky vyhledávání - "Day Shan Liu"

Akademický článek

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Autor: Bo-Rui Huang, Kui-Shou You, Kai-Chao Yang, Day-Shan Liu

Publikováno v: Materials Research Express, Vol 8, Iss 12, p 126201 (2021)

In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p -type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p -GaN epilayer was obstructed as the

Externí odkaz: https://doaj.org/article/9504f6193093441daeb715c3f3586299

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Guided-mode resonance pressure sensor based on a stretchable low-density polyethylene film

Autor: Wen-Kai Kuo, Jing-Xuan Lin, Jaturon Tongpakpanang, Day-Shan Liu

Publikováno v: Applied optics. 61(21)

In this study, we demonstrate a method to fabricate a guided-mode resonance (GMR) device on a flexible and transparent low-density polyethylene (LDPE) film and present the measurement results of this device as a pressure sensor. A simple thermal-nano

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9c0779d31eb50bec53453ca5ec64070
https://pubmed.ncbi.nlm.nih.gov/36256235

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Investigations into the Photocatalytic and Antibacterial Activity of the Nitrogen-Annealed Titanium Oxide/Silver Structure

Autor: Jun-Kai Zhang, Kui-Shou You, Chen-Hao Huang, Pin-Jyun Shih, Day-Shan Liu

Publikováno v: Coatings; Volume 12; Issue 11; Pages: 1671

In this study, a thin silver (Ag) layer was evaporated onto the anatase-titanium oxide (TiOx) film. This structure was then annealed at various temperatures under nitrogen ambient to realize the Ag nanoparticles formed on the TiOx surface. The photoc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d7ecf348c3612016779462fbfda7014
https://doi.org/10.3390/coatings12111671

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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Autor: Day Shan Liu, Edward Yi Chang, Ching-Ting Lee, Hsin Ying Lee, Jen-Inn Chyi

Publikováno v: Materials
Materials, Vol 14, Iss 5474, p 5474 (2021)
Volume 14
Issue 19

Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga2O3) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f221e0f0b4314ad9c6b1e6a4886290b
https://pubmed.ncbi.nlm.nih.gov/34639872

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Akademický článek

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Autor: Hua-Wen Liu, Tai-Hong Chen, Chun-Hao Chang, Shao-Kai Lu, Yi-Cyuan Lin, Day-Shan Liu

Publikováno v: Applied Sciences, Vol 7, Iss 1, p 56 (2017)

The gas barrier property of a silicon oxide (SiOx) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the gl

Externí odkaz: https://doaj.org/article/b4fadd8a09204c0d96271a666b06b685

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Akademický článek

Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

Autor: Wei-Hua Hsiao, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jyun-Yong Li, Hong-Jyun Lin, Nan-Jay Wu, Day-Shan Liu

Publikováno v: Applied Sciences, Vol 6, Iss 2, p 60 (2016)

Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of t

Externí odkaz: https://doaj.org/article/4ef2c355e465489a86ce6bd9bb0134eb

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Step coverage of the barrier films deposited onto patterned photoresist

Autor: Shun-Chi Chen, Sheng-Fu Lin, Day-Shan Liu, Chun-Hao Chang, Hua-Wen Liu, Tai-Hong Chen, Yong-Ji Su

Publikováno v: Microsystem Technologies. 24:4149-4158

In this study, silicon oxynitride (SiOxNy) films and three-paired organosilicon/SiOxNy multilayered structures prepared by the plasma-enhanced chemical vapor deposition were respectively deposited onto the polyethylene terephthalate and silicon subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15ca357396ec7c8dad227da3c741d9cc
https://doi.org/10.1007/s00542-017-3690-4

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