Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Daxin Han"'
Autor:
Daxin Han, Chengliang Hu
Publikováno v:
Metals, Vol 14, Iss 6, p 681 (2024)
The extensive use of carbon fiber-reinforced composites and aluminum alloys represents the highest level of automotive body-in-white lightweighting. The effective and secure joining of these heterogeneous materials remains a prominent and actively re
Externí odkaz:
https://doaj.org/article/62866c584dbe425d90f77aeb859f5e41
Autor:
Zhihui Zeng, Changxian Wang, Gilberto Siqueira, Daxin Han, Anja Huch, Sina Abdolhosseinzadeh, Jakob Heier, Frank Nüesch, Chuanfang (John) Zhang, Gustav Nyström
Publikováno v:
Advanced Science, Vol 7, Iss 15, Pp n/a-n/a (2020)
Abstract Designing lightweight nanostructured aerogels for high‐performance electromagnetic interference (EMI) shielding is crucial yet challenging. Ultrathin cellulose nanofibrils (CNFs) are employed for assisting in building ultralow‐density, r
Externí odkaz:
https://doaj.org/article/a4365e75830a456aa1161bc14430bf97
Autor:
Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz, Akshay Mahadev Arabhavi, Olivier J. S. Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (7)
Digital electronics power consumption evolved into a major concern: at the current pace, general-purpose computing energy consumption will exceed global energy production before 2045. The principal approach to curbing energy consumption in digital ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eada1e5bd8e2fecaa412bc2b56b0332a
https://doi.org/10.1109/ted.2022.3171739
https://doi.org/10.1109/ted.2022.3171739
Autor:
Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Fluckiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (4)
We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record fMAX =1.2 THz, a simultaneous fT =475 GHz, and BVCEO} =5.4 V. The resulting BVCEO × fMAX =6.48 THz-V is unparalleled in semiconductor t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2229a758f5bc0327c501d824543a36f7
https://doi.org/10.1109/ted.2021.3138379
https://doi.org/10.1109/ted.2021.3138379
Autor:
Giorgio Bonomo, Daxin Han, Olivier Ostinelli, Diego Calvo Ruiz, Tamara Saranovac, Colombo R. Bolognesi
Publikováno v:
IEEE Electron Device Letters. 41:1320-1323
GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs) can in principle combine the wide bandwidth of HEMTs to the low gate leakage current of MOSFETs in a single deeply-scaled ultrahigh speed low-noise technology. Desp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e09623a0b315d6bcbde7952638b976c
https://doi.org/10.1109/led.2020.3012017
https://doi.org/10.1109/led.2020.3012017
Publikováno v:
ACS Nano. 14:2927-2938
Ultralight and highly flexible biopolymer aerogels, composed of biomimetic cellular microstructures formed from cellulose nanofibers and silver nanowires, are assembled via a convenient and facile freeze-casting method. The lamellar, honeycomb-like,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abc2f8e8a238e2cb932bf12f85950b34
https://doi.org/10.1021/acsnano.9b07452
https://doi.org/10.1021/acsnano.9b07452
Autor:
Fei Pan, Mirko Luković, Tingting Wu, Changxian Wang, Gustav Nyström, Daxin Han, Gilberto Siqueira, Zhihui Zeng
Publikováno v:
Journal of Materials Chemistry A. 8:17969-17979
Nanofibrillated cellulose is efficiently employed as a green dispersant, cross-linker and structure-directing agent assisting in the preparation of large-area ambient pressure dried carbon nanotube (CNT) foams using a facile, energy-efficient, and sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee6e22e275e200aee5a657a589ce640
https://doi.org/10.1039/d0ta05961g
https://doi.org/10.1039/d0ta05961g
Autor:
Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz, Akshay Mahadev Arabhavi, Olivier J. S. Ostinelli, Colombo R. Bolognesi
Publikováno v:
IEEE Transactions on Electron Devices, 69 (7)
Part I of this work described narrow bandgap GaInAs-based I-MOS devices with a minimum steep slope SSmin = 1.25 mV/dec maintained over 4 orders of magnitude in drain current, ION/IOFF ratios >106 at 300 K (>109 at 15 K), and low operating voltages fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9aee6e7023f575a4fa1b9dca1d00694
Autor:
Olivier Ostinelli, Daxin Han, Akshay M. Arabhavi, Colombo R. Bolognesi, Anna Hambitzer, Tamara Saranovac, Diego Calvo Ruiz
Publikováno v:
IEEE Transactions on Electron Devices, 66 (11)
GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To date, the influence of the InAs inset design details on transistor performance has not been pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbfea8db7fd4b0c3f34650c851ca83e3
https://doi.org/10.1109/ted.2019.2940638
https://doi.org/10.1109/ted.2019.2940638
Autor:
Olivier Ostinelli, Tamara Saranovac, Daxin Han, Diego Calvo Ruiz, Colombo R. Bolognesi, Akshay M. Arabhavi
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:496-501
Optimum device performance in terms of noise and gain of AlInAs/GaInAs/InP High Electron Mobility Transistors (HEMTs) requires minimizing the contact resistance ${R} _{C}$ . In several HEMT fabrication steps in device manufacturing it is common to ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e8847c86ad991ac43fe0c8896eb11a
https://doi.org/10.1109/tsm.2019.2940320
https://doi.org/10.1109/tsm.2019.2940320