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Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C.

Autor: Mattinen, Miika, Schulpen, Jeff J. P. M., Dawley, Rebecca A., Gity, Farzan, Verheijen, Marcel A., Kessels, Wilhelmus M. M., Bol, Ageeth A.

Publikováno v: ACS Applied Materials & Interfaces; 7/26/2023, Vol. 15 Issue 29, p35565-35579, 15p

Structural Aspects of MoS x Prepared by Atomic Layer Deposition for Hydrogen Evolution Reaction.

Autor: Mattinen M; Department of Applied Physics and Science Education, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands., Chen W; Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands., Dawley RA; Department of Chemistry, University of Michigan, 930 N. University Avenue, Ann Arbor, Michigan 48109-1055, United States., Verheijen MA; Department of Applied Physics and Science Education, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.; Eurofins Materials Science Netherlands, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands., Hensen EJM; Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands., Kessels WMM; Department of Applied Physics and Science Education, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands., Bol AA; Department of Applied Physics and Science Education, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.; Department of Chemistry, University of Michigan, 930 N. University Avenue, Ann Arbor, Michigan 48109-1055, United States.

Publikováno v: ACS catalysis [ACS Catal] 2024 Jun 20; Vol. 14 (13), pp. 10089-10101. Date of Electronic Publication: 2024 Jun 20 (Print Publication: 2024).

Nb Doping and Alloying of 2D WS 2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts.

Autor: Schulpen JJPM; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands., Lam CHX; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands., Dawley RA; Department of Chemistry, University of Michigan, 930 N. University Avenue, Ann Arbor, Michigan 48109, United States., Li R; Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Se, Minneapolis, Minnesota 55455, United States., Jin L; Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Se, Minneapolis, Minnesota 55455, United States., Ma T; Michigan Center for Materials Characterization, University of Michigan, 2800 Plymouth Road, Ann Arbor, Michigan 48109, United States., Kessels WMM; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands., Koester SJ; Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Se, Minneapolis, Minnesota 55455, United States., Bol AA; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands.; Department of Chemistry, University of Michigan, 930 N. University Avenue, Ann Arbor, Michigan 48109, United States.

Publikováno v: ACS applied nano materials [ACS Appl Nano Mater] 2024 Apr 01; Vol. 7 (7), pp. 7395-7407. Date of Electronic Publication: 2024 Apr 01 (Print Publication: 2024).