Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Davit Yeghikyan"'
Publikováno v:
Journal of Non-Crystalline Solids. 358:3396-3402
Very high effective minority carrier lifetime (6.3 ms) and very low surface recombination velocity (2.6 cm/s) have been demonstrated on float-zone 1–2 Ω cm crystalline silicon (c-Si) wafers by depositing a-Si:H films using grid-biased remote radio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631b5056f4881c6547b7e73c0130b2d3
https://doi.org/10.1016/j.jnoncrysol.2012.08.015
https://doi.org/10.1016/j.jnoncrysol.2012.08.015
Autor:
Barzin Bahardoust, Stefan Zukotynski, Adel B. Gougam, Davit Yeghikyan, Keith Leong, Nazir P. Kherani, Tome Kosteski, Alongkarn Chutinan
Publikováno v:
physica status solidi (a). 207:539-543
The DC saddle-field (DCSF) glow discharge method was used to deposit intrinsic a-Si:H onto c-Si to passivate the c-Si surface. The effective minority carrier lifetime in the heterostructures as a function of the excess minority carrier density in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e02e696b87379bdccdeac7ef1401782
https://doi.org/10.1002/pssa.200982803
https://doi.org/10.1002/pssa.200982803
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:661-664
We have measured conductance fluctuations in four samples of p-type hydrogenated amorphous silicon, two doped at 10−4 and the other two at 5×10−2, at temperatures between 22 and 200 °C. The noise power density varies for the most part as 1/fα
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db1824990a26efce4858d49028ba2976
https://doi.org/10.1116/1.582244
https://doi.org/10.1116/1.582244
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
Low temperature processing of silicon photovoltaic (PV) solar cells with excellent passivation quality enables the effective use of ultra-thin wafers for solar cell manufacturing, thus paving the way for high-efficiency low-cost silicon photovoltaics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2bf590121b37f279506d7b0c8cdb60a
https://doi.org/10.1109/pvsc.2012.6317777
https://doi.org/10.1109/pvsc.2012.6317777
Autor:
Keith Leong, Wing Yin Kwong, Davit Yeghikyan, Stefan Zukotynski, Nazir P. Kherani, Adel B. Gougam, Tome Kosteski, Barzin Bahardoust
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
The DC Saddle Field PECVD system was used to deposit hydrogenated amorphous silicon (a-Si:H) layers for high efficiency amorphous-crystalline silicon heterojunction (ACSHJ) solar cells. The plasma controlling parameters; including the chamber pressur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5aebf63604e89f9fa64e7a3082ecde
https://doi.org/10.1109/pvsc.2011.6186238
https://doi.org/10.1109/pvsc.2011.6186238
Autor:
Nazir P. Kherani, Davit Yeghikyan, Anthony Hertanto, B. Gangadhar Rayaprol, Stefan Zukotynski, Honggang Liu
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Back Amorphous-Crystalline Silicon Heterojunction (BACH) photovoltaic device integrates a range of high efficiency features while using low temperature (∼200 °C) fabrication processes. High efficiency features include back contact metallization, o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64abf6b2fa473e6cc947cb52f4c95889
https://doi.org/10.1109/pvsc.2009.5411466
https://doi.org/10.1109/pvsc.2009.5411466
Autor:
Barzin Bahardoust, Keith Leong, Davit Yeghikyan, Thomas Blaine, Alongkarn Chutinan, Nazir P. Kherani, Tome Kosteski, Stefan Zukotynski, Adel B. Gougam
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
The DC saddle field glow discharge method was used to deposit a-Si∶H in order to passivate c-Si surfaces. The process temperature and the thickness of the a-Si∶H films were varied. In addition subsequent annealing of the smaples were studied. Pas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61f2bdba0afad210c00bbd9c9ffe260d
https://doi.org/10.1109/pvsc.2009.5411483
https://doi.org/10.1109/pvsc.2009.5411483
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
We present here the application of CPM for the examination of defect density in the doped amorphous silicon layer and the amorphous-crystalline silicon interface of silicon heterojunction photovoltaic devices. CPM derived absorption and internal quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bdfb888a9cb4ef8003231a9c529fe65
https://doi.org/10.1109/wcpec.2006.279393
https://doi.org/10.1109/wcpec.2006.279393
Autor:
W.L. Roes, Nazir P. Kherani, Davit Yeghikyan, I. Milostnaya, S. Zukotynski, Franco Gaspari, Tatiana Allen, Tome Kosteski
Publikováno v:
MRS Proceedings. 762
Amorphous (a-Si:H) and microcrystalline (μc-Si:H) hydrogenated silicon films were obtained using DC saddle field glow discharge. The structure of the films was determined by Raman spectroscopy, SEM and TEM. The optoelectronic characteristics of both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c6c1b2076cedc79f1e8d4a06f08cf6
https://doi.org/10.1557/proc-762-a6.15
https://doi.org/10.1557/proc-762-a6.15
Autor:
Tatiana Allen, Davit Yeghikyan, Nazir P. Kherani, I. Milostnaya, S. Zukotynski, Keith Leong, Franco Gaspari, Tome Kosteski
Publikováno v:
MRS Proceedings. 762
In the D.C. saddle field glow discharge deposition the transition from amorphous to microcrystalline silicon thin films occurs when the silane concentration in the gas phase drops below 10%. We report here the results of Raman spectroscopy, SEM, TEM,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d57fea29f343b60e5c540c57ae8cfc5
https://doi.org/10.1557/proc-762-a6.10
https://doi.org/10.1557/proc-762-a6.10