Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Davit, Melkonyan"'
Autor:
Davit Melkonyan
Publikováno v:
State and Law. 91:5-13
The article is dedicated to the seizure of property subject to confiscation during the investigation of corruption crimes. Based on an analysis of international documents, such as the FATF Recommendations, the UN Conventions, and the ECHR judgments,
Autor:
Nicolas Rolland, G. Audoit, Isabelle Mouton, Davit Melkonyan, Wilfried Vandervorst, Janusz Bogdanowicz, Didier Blavette, Jean-Paul Barnes, François Vurpillot, Claudia Fleischmann, Sylvain Barraud, Adeline Grenier, Sébastien Duguay
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
Scripta Materialia, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
Scripta Materialia, Elsevier, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
Scripta Materialia, 2018, 148, pp.91-97. ⟨10.1016/j.scriptamat.2017.05.012⟩
International audience; Atom probe tomography is unique in its ability to image in 3D at the atomic scale and measure composition in asemiconductor device with high sensitivity. However it suffers from many artefacts. The current state of the art ofn
Autor:
E. Vecchio, Roger Loo, Geert Eneman, W. Li, Nadine Collaert, C. Lorant, Geert Hellings, Davit Melkonyan, Trong Huynh-Bao, Philippe Matagne, Erik Rosseel, Arturo Sibaja-Hernandez, Farid Sebaai, Anabela Veloso, Claudia Fleischmann, Dennis H. van Dorp, Niamh Waldron, Katia Devriendt, Zheng Tao, Dan Mocuta, Bernardette Kunert, Efrain Altamirano-Sanchez, Lieve Teugels, Stephan Brus, Philippe Marien, Alexey Milenin, Vasile Paraschiv, Eddy Simoen, Boon Teik Chan
Publikováno v:
ECS Transactions. 80:3-20
Over the past decades, aggressive and continuous transistor scaling according to Moore’s law has enabled new system features thanks to ever increasing device performance and density, reduced cost and power consumption. To keep the industry’s grow
Autor:
Ramya, Cuduvally, Richard J H, Morris, Piero, Ferrari, Janusz, Bogdanowicz, Claudia, Fleischmann, Davit, Melkonyan, Wilfried, Vandervorst
Publikováno v:
Ultramicroscopy. 210
With the objective of applying laser-assisted atom probe tomography to compositional analysis within nanoscale InGaAs devices, experimental conditions that may provide an accurate composition estimate were sought by extensively studying an InGaAs bla
Autor:
Davit Melkonyan, Paola Favia, Bastien Douhard, Alexis Franquet, Wilfried Vandervorst, Thierry Conard
Publikováno v:
Applied Surface Science. 365:143-152
The continued downscaling of micro and nanoelectronics devices has increased the importance of novel materials and their interfaces very strongly thereby necessitating the availability of adequate metrology and very tight process control as well. For
Autor:
Davit Melkonyan, Luca La Notte, Jeffrey G. Tait, Paul Heremans, Andrea Reale, David Cheyns, Robert Gehlhaar
Publikováno v:
Solar Energy Materials and Solar Cells. 144:493-499
The scaling of thin film photovoltaics to a commercially viable size relies on the series connection of multiple small cells into modules. These interconnections are typically formed by three patterning steps, each of which have an impact on the seri
Autor:
Davit Melkonyan, Wilfried Vandervorst, Janusz Bogdanowicz, Piero Ferrari, Claudia Fleischmann, Richard J. H. Morris, Ramya Cuduvally
Publikováno v:
Ultramicroscopy. 210:112918
With the objective of applying laser-assisted atom probe tomography to compositional analysis within nanoscale InGaAs devices, experimental conditions that may provide an accurate composition estimate were sought by extensively studying an InGaAs bla
Autor:
Ming Zhao, Wilfried Vandervorst, Richard J. H. Morris, Davit Melkonyan, Ramya Cuduvally, Paul van der Heide
Publikováno v:
Ultramicroscopy. 206
Scaling and non-planar architectures are key factors helping to advance the semiconductor field. Accurate 3-dimensional atomic scale information is therefore sought but this presents a significant metrology challenge. Atom probe tomography has emerge
For the very first time, atomic force microscopy is used to determine quantitatively the 3-dimensional shape of an atom probe tip, which is key towards improved accuracy and understanding of artefacts in atom probe tomography. We have successfully me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1a249c45aa665c627059d994aa1bd6b
https://lirias.kuleuven.be/handle/123456789/651209
https://lirias.kuleuven.be/handle/123456789/651209
Autor:
Claudia Fleischmann, Ramya Cuduvally, Davit Melkonyan, Igor Makhotkin, Jonathan Op de Beeck, Richard V. Morris, Paul van der Heide, Wilfried Vandervorst
Publikováno v:
Microscopy and Microanalysis. 25:312-313