Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Davide Saguatti"'
Autor:
Wouter Koopman, Andrea Stefani, Raffaella Capelli, Susanna Cavallini, Stefano Toffanin, Gianluca Generali, Michele Muccini, Giampiero Ruani, Davide Saguatti
Publikováno v:
Laser & Photonics Reviews. 7:1011-1019
Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that hold great promise for a variety of applications, including flat panel displays, integrated light sources for sensing and optical communication systems. The na
Autor:
Guido Turatti, Davide Saguatti, Roberto Zamboni, Simone Bonetti, Stefano Toffanin, Anna Sagnella, Giampiero Ruani, Michela Chiappalone, Assunta Pistone, Andrea Stefani, Michele Muccini, Valentina Benfenati, Gianluca Generali
Publikováno v:
Nature materials
12 (2013): 672–680. doi:10.1038/NMAT3630
info:cnr-pdr/source/autori:Valentina Benfenati, Stefano Toffanin, Simone Bonetti, Guido Turatti, Assunta Pistone, Michela Chiappalone, Anna Sagnella, Andrea Stefani, Gianluca Generali, Giampiero Ruani, Davide Saguatti, Roberto Zamboni, Michele Muccini/titolo:A transparent organic transistor structure for bidirectional stimulation and recording of primary neurons/doi:10.1038%2FNMAT3630/rivista:Nature materials (Print)/anno:2013/pagina_da:672/pagina_a:680/intervallo_pagine:672–680/volume:12
12 (2013): 672–680. doi:10.1038/NMAT3630
info:cnr-pdr/source/autori:Valentina Benfenati, Stefano Toffanin, Simone Bonetti, Guido Turatti, Assunta Pistone, Michela Chiappalone, Anna Sagnella, Andrea Stefani, Gianluca Generali, Giampiero Ruani, Davide Saguatti, Roberto Zamboni, Michele Muccini/titolo:A transparent organic transistor structure for bidirectional stimulation and recording of primary neurons/doi:10.1038%2FNMAT3630/rivista:Nature materials (Print)/anno:2013/pagina_da:672/pagina_a:680/intervallo_pagine:672–680/volume:12
Real-time stimulation and recording of neural cell bioelectrical activity could provide an unprecedented insight in understanding the functions of the nervous system, and it is crucial for developing advanced in vitro drug screening approaches. Among
Autor:
Corrado Angelini, Giovanni Verzellesi, Filippo Bosi, V. Tyzhnevyi, A. Lusiani, F. Forti, Luca Bidinelli, Fabio Morsani, Giorgio Curzio, G. Batignani, I. Rachevskaia, J. J. Walsh, E. Paoloni, Luigi Rovati, Andrea Bosi, F. Cardellini, L. Bosisio, Claudio Piemonte, A. Del Gratta, Maurizio Boscardin, S. Bettarini, M. Calamosca, Nicola Zorzi, Matteo Bonaiuti, A. Picciotto, Riccardo Ciolini, G. Rizzo, Gabriele Giacomini, Francesco D'Errico, S. Penzo, Davide Saguatti, Mario Giorgi, G.-F. Dalla Betta
A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d046144fa3e6a880029e40bcaf3951fa
https://hdl.handle.net/11368/2836187
https://hdl.handle.net/11368/2836187
Autor:
Gaudenzio Meneghesso, Michele Goano, Giovanni Verzellesi, Matteo Meneghini, Francesco Bertazzi, Davide Saguatti, Enrico Zanoni
Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation are classified and reviewed. Droop mechanisms taken into consideration are Auger recombination, reduced active volume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd466d0ac040f17003359ffd641933db
http://hdl.handle.net/11577/2693082
http://hdl.handle.net/11577/2693082
Autor:
Davide Saguatti, Gaudenzio Meneghesso, Berthold Hahn, Rainer Butendeich, Enrico Zanoni, Giovanni Verzellesi, Luca Bidinelli, Matteo Meneghini
Efficiency-droop mechanisms and related technological remedies are critically analyzed in multi-quantum-well (QW) InGaN/GaN blue light-emitting diodes by means of numerical device simulations and their comparison with experimental data. Auger recombi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c175841e440a14aae08b314467003e
http://hdl.handle.net/11577/2518071
http://hdl.handle.net/11577/2518071
Autor:
V. Tyzhnevyi, Davide Saguatti, M. Calamosca, G.-F. Dalla Betta, G. Batignani, Luigi Rovati, Andrea Bosi, Francesco D'Errico, S. Bettarini, Maurizio Boscardin, Luca Bidinelli, S. Penzo, F. Cardellini, L. Bosisio, Giovanni Verzellesi, I. Rachevskaia, A. Del Gratta, F. Forti, Gabriele Giacomini
An autonomous Radon sensor with wireless connectivity has been developed, using a BJT detector on high-resistivity silicon as alpha-particle detector. Charged Radon daughters are collected on the detector surface electrostatically. Thanks to the BJT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::502257b7b15e4b0f16443946b45eb06e
https://hdl.handle.net/11380/903289
https://hdl.handle.net/11380/903289
Publikováno v:
2011 7th Conference on Ph.D. Research in Microelectronics and Electronics.
A battery-powered, wireless alpha-ray sensor has been designed and realized using a high-resistivity-silicon BJT as radiation detector. Thanks to its excellent signal-to-noise ratio and intrinsic amplification, real-time alpha particle detection is p
Autor:
Giovanni Verzellesi, Giuseppe Martini, David Stoppa, Lucio Pancheri, Silvano Donati, Quazi Delwar Hossain, Gian-Franco Dalla Betta, Davide Saguatti
We report on the design of a current-assisted photonic demodulator (CAPD) using standard 0.18-μm complementary metal-oxide-semiconductor technology and its electrooptical characterization. The device can perform both light detection and demodulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::521927f0035132fd9067be65e6a92189
https://hdl.handle.net/11380/652838
https://hdl.handle.net/11380/652838
Autor:
Giovanni Verzellesi, Mohamed Missous, Alessandro Chini, M. Mohamad Isa, Ka Wa Ian, Davide Saguatti
This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cb6433da0eb8cc90d8af58c3acb2afa
https://hdl.handle.net/11380/652841
https://hdl.handle.net/11380/652841
Autor:
Giovanni Verzellesi, M. Mohamad Isa, Davide Saguatti, Alessandro Chini, Ka Wa Ian, Mohamed Missous
High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a291cc310ea02afba54d953e81f953e5
https://hdl.handle.net/11380/645539
https://hdl.handle.net/11380/645539