Výsledky vyhledávání - "Davide Cammilleri"

Pure sulfide wide gap CIGS on silicon for tandem applications by exploring versatile coevaporation of metallic films and sulfur annealing

Autor: Nicolas Barreau, Jackson Lontchi, Davide Cammilleri, Amelle Rebai, Alexandre Crossay, Daniel Lincot, Hugo Gloaguen

Publikováno v: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Jun 2021, Fort Lauderdale, United States. pp.2079-2083, ⟨10.1109/PVSC43889.2021.9518966⟩

International audience; Cu(In,Ga)(S,Se)(2) (CIGS) is a good candidate for tandem solar cell applications, thanks to its bandgap which can be tuned by changing the ratios In/Ga and Se/S. In particular, widegap CIGS is well suited to be implemented int

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc4986a0b9fd990fde12e3233ef8c2ae
https://hal.archives-ouvertes.fr/hal-03406875

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High efficiency solar cell based on Cu(In,Ga)S2 thin film grown by 3-stage process

Autor: Nicolas Stephant, Daniel Lincot, Angelica Thomere, M. Teresa Caldes, Nicolas Barreau, Alain Lafond, Davide Cammilleri, Alexandre Crossay, Romain Bodeux, Baptiste Berenguier, Catherine Guillot-Deudon

Publikováno v: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC).

We investigate the structural, morphological and optoelectronic properties of Cu(In,Ga)S 2 thin films synthesized following the 3-stage process. The optoelectronic characteristics of the layers are observed drastically improved when the highest proce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14103ff67eac99b602af5cd987fb2905
https://doi.org/10.1109/pvsc45281.2020.9300598

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Low electrical resistivity in thin and ultrathin copper layers grown by high power impulse magnetron sputtering

Autor: Thomas Maroutian, Tiberiu Minea, Davide Cammilleri, Daniel Lundin, Philippe Lecoeur, F. Cemin

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (5), pp.051506. ⟨10.1116/1.4959555⟩

Ultrathin copper (Cu) layers are in continuous demand in several areas, such as within microelectronics and space, as well as in instrumentation technology requiring an electrical resistivity as low as possible. However, the performance of modern cop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a69169dd9e0388b64b6d6a3a20f93b2
https://hal.archives-ouvertes.fr/hal-02430160

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Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror

Autor: Davide Cammilleri, Daniel Bouchier, C. Tran Manh, Dominique Débarre, N. Yam, Frédéric Fossard, Mathieu Halbwax, Jacques Boulmer

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩
Thin Solid Films, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩

The use of Ge nanostructures in microelectronic devices requires quite low thermal budget processes. In this paper, we report on the development of a technique which enables the localization of laser thermal annealing. Dielectric layers have been dep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a870a2f78f09a4477a61bc6d8b9855c
https://doi.org/10.1016/j.tsf.2008.08.147

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Selective Epitaxial Growth Of Si And Relaxed Ge By UHV-CVD In Si(001) Windows

Autor: Daniel Bouchier, Véronique Mathet, Davide Cammilleri, Dominique Débarre, Jacques Boulmer, Mathieu Halbwax, Frédéric Fossard, Huu Lam Nguyen, Vy Yam

Publikováno v: ECS Transactions. 3:593-598

Relaxed germanium was deposited following a low temperature-high temperature procedure by ultrahigh vacuum chemical vapor deposition in Si trenches opened through a SiO2 mask. The resulting growth is selective, the germanium fills the Si trenches and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8b2bc3b252f995c4a3a0376745039b8
https://doi.org/10.1149/1.2355856

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Conception of a 90-GHz metamaterial-based coupler for astrophysical applications

Autor: Joseph Martino, A. Tartari, Michel Piat, A. Ghribi, F. Gadot, Alassane Sidibe, Benoit Belier, François Pajot, Davide Cammilleri, Faouzi Boussaha, G. Bordier

Publikováno v: Applied physics. A, Materials science & processing
Applied physics. A, Materials science & processing, 2014, 117 (2), pp.523-526. ⟨10.1007/s00339-014-8696-5⟩
Applied physics. A, Materials science & processing, Springer Verlag, 2014, 117 (2), pp.523-526. ⟨10.1007/s00339-014-8696-5⟩

International audience; Designed for astrophysical applications, this coupler must be as small as possible to be integrated in a low temperature superconducting detection chain. By using metamaterials, dimensions can be reduced and performances enhan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1491b62bf3e4601b70a36cd2177a579f
https://hal.science/hal-02556458

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Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

Autor: Davide Cammilleri, Etienne Bustarret, Dominique Débarre, Daniel Bouchier, C. Dubois, J. Boulmer, Christophe Marcenat, Frédéric Fossard, Philipp Achatz, C. Tran Manh

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2008, 517, pp.75. ⟨10.1016/j.tsf.2008.08.073⟩
Thin Solid Films, 2008, 517, pp.75. ⟨10.1016/j.tsf.2008.08.073⟩

International audience; Gas Immersion Laser Doping (GILD) of silicon with boron has shown excellent performances in terms of junction depth, box-like profile, dopant concentration and activation. The study of the GILD process is extended to boron and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52d3de94551bbc7f0f4423d9e27c63f3
https://hal.archives-ouvertes.fr/hal-00761044

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Kinetics of Selective Epitaxial Growth of Si and Relaxed Ge by Ultrahigh Vacuum Chemical Vapor Deposition in Si(001) Windows

Autor: Frédéric Fossard, Mathieu HALBWAX, Vy YAM, Huu Lam Nguyen, Véronique Mathet, Davide Cammilleri, Dominique Débarre, Jacques Boulmer, Daniel BOUCHIER

Publikováno v: ECS Meeting Abstracts. :1463-1463

not Available.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf83fd3fb39297c904ec5c2b2a35f021
https://doi.org/10.1149/ma2006-02/31/1463

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