Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Davide, Bisi"'
Autor:
Davide Bisi, Long Nguyen, Philip Zuk, Ashish Gokhale, Keith Coffey, Ted Liu, Bill Cruse, Tsutomu Hosoda, Masamichi Kamiyama, Primit Parikh, Umesh Mishra
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e8290abbc1e29b7fc1f6e9b80edea2
https://doi.org/10.1109/apec43599.2022.9773446
https://doi.org/10.1109/apec43599.2022.9773446
Autor:
Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2197762bb58899972fedde82eb1319cd
https://doi.org/10.1109/irps48227.2022.9764492
https://doi.org/10.1109/irps48227.2022.9764492
Autor:
Davide Bisi, Brian Romanczyk, Xiang Liu, Geetak Gupta, Tobias Brown-Heft, Ron Birkhahn, Rakesh Lal, Carl J. Neufeld, Stacia Keller, Primit Parikh, Umesh K. Mishra, Lee McCarthy
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ce8bf602e2582c3f9eb35447cc6453
https://doi.org/10.1109/wipda49284.2021.9645102
https://doi.org/10.1109/wipda49284.2021.9645102
Autor:
Davide Bisi, Rakesh K. Lal, YuLu Huang, Bill Cruse, Philip Zuk, Umesh K. Mishra, John Gritters, Carl J. Neufeld, J. McKay, Tsutomu Hosoda, Primit Parikh, Geetak Gupta, Yifeng Wu, Masamichi Kamiyama
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
Short-circuit capability is essential for the adoption of GaN power devices in motor drives for industrial and automotive applications. In this work, we report an innovative solution for GaN power switches to achieve short-circuit withstanding time (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa593d1e491f94eb99c498ef96937592
https://doi.org/10.1109/apec42165.2021.9486987
https://doi.org/10.1109/apec42165.2021.9486987
Autor:
Carlo De Santi, Stacia Keller, Gaudenzio Meneghesso, Davide Bisi, Matteo Meneghini, Steven Wienecke, Elaheh Ahmadi, Matt Guidry, Haoran Li, Enrico Zanoni, Umesh K. Mishra
Publikováno v:
IEEE Electron Device Letters. 39:1007-1010
This letter reports on the observation of hot-electron and impact-ionization mechanisms in N-polar GaN-based MIS-HEMTs designed for high frequency (RF) operation. Thanks to the extremely low gate leakage of such devices, we were able to demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::198b85fec6eb6679b132f886f757905d
https://doi.org/10.1109/led.2018.2835517
https://doi.org/10.1109/led.2018.2835517
Autor:
Chirag Gupta, Umesh K. Mishra, Bill Cruse, Stacia Keller, Dong Ji, Wenwen Li, Davide Bisi, Anchal Agarwal, Silvia H. Chan, Srabanti Chowdhury, Jeffrey Haller, Michelle Labrecque, Rakesh K. Lal
Publikováno v:
IEEE Electron Device Letters. 39:1030-1033
This letter reports on the dynamic $R_{\text{ON}}$ performance of large-area GaN vertical trench MOSFETs (OG-FETs) fabricated on bulk GaN substrates. OG-FETs demonstrated excellent DC performance with a breakdown voltage of 900 V and a $R_{\text{ON}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6f6401df786d709ac8d5dd130b4dd9
https://doi.org/10.1109/led.2018.2843335
https://doi.org/10.1109/led.2018.2843335
Autor:
Brian Romanczyk, Davide Bisi, Haoran Li, Matteo Meneghini, Umesh K. Mishra, Gaudenzio Meneghesso, Matthew Guidry, Enrico Zanoni, Steven Wienecke, Stacia Keller, Elaheh Ahmadi, Carlo De Santi
This paper reports on the hot-carrier effects and semi-on-state behavior of nitrogen-polar GaN MIS-HEMTs at cryogenic temperatures (from 300 K down to 100 K). In the semi-on-state $(\text {V}_{\text {G}} \approx -{2}\,\,\text {V})$ , holes are genera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bce19abb8a7d0b029981c6587717dd3
http://hdl.handle.net/11577/3344614
http://hdl.handle.net/11577/3344614
Autor:
Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Gaudenzio Meneghesso, Denis Marcon, Tian-Li Wu, Enrico Zanoni, Marleen Van Hove, Stefaan Decoutere, Steve Stoffels
Publikováno v:
IEEE Electron Device Letters. 37:474-477
This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator–semiconductor high electron mobility transistors with partially recessed AlGaN. Based on a set of stress/recovery experiments carried o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c178dcba22052313e0549c6a9d34143
https://doi.org/10.1109/led.2016.2530693
https://doi.org/10.1109/led.2016.2530693