Zobrazeno 1 - 10
of 45
pro vyhledávání: '"David W. Weyburne"'
Publikováno v:
Journal of Crystal Growth. 449:148-155
A systematic study of the growth of atomically smooth few-layer sp 2 bonded BN on 50 mm sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using Triethylboron (TEB) and NH 3 as precursors is described. Based on the experimental res
Autor:
David W. Weyburne
Publikováno v:
Experimental Thermal and Fluid Science. 54:22-28
A new method for describing the shape and thickness of 2-D wall bounded boundary layer velocity profile is presented. The new method is based on calculating parameters using simple integrals of the velocity profile. In fact the basic integral kernel
Publikováno v:
physica status solidi c. 11:778-781
The photoluminescence of m-plane GaN grown on m-plane sapphire substrate by MOCVD is reported. The defect related emissions with temperature and excitation power dependence are detailed. In addition to the near band-edge emission (at ∼3.472 eV), tw
Publikováno v:
Journal of Crystal Growth. 367:104-109
A characterization study of heteroepitaxial grown m-plane GaN on m-plane sapphire substrates by MOCVD was undertaken. Using X-ray diffraction and photoluminescence, the growth characteristics and epi-layer properties of m-GaN layers were investigated
Publikováno v:
physica status solidi c. 8:2251-2254
The effect of basal-plane stacking faults on the Bragg peak broadening in m-plane GaN is studied using X-ray diffraction ω-scans and ω/2θ-scans. The analysis considers the coexistence of multiple broadening contributions including tilt, twist, lim
Autor:
David Bliss, Robert Lancto, Michael J. Suscavage, Candace Lynch, Fernando Ponce, Buguo Wang, Stacy Swider, David W. Weyburne, Ti Li
Publikováno v:
Journal of Crystal Growth. 318:1030-1033
High quality GaN crystals have been successfully grown by the ammonothermal method in alkaline ammonia solutions using hydride vapor phase epitaxy (HVPE) seeds. The grown crystals, over 1 mm thick, are clear and possess excellent structural and optic
Publikováno v:
Journal of Crystal Growth. 318:418-422
An X-ray diffraction analysis technique incorporating microstrain broadening is introduced to characterize nitride materials. The technique is tested using GaN and AlN samples prepared with different growth processes. The computation technique relies
Publikováno v:
physica status solidi (a). 207:2446-2455
An X-ray diffraction (XRD) technique for analyzing basal-plane stacking faults (BSFs) is introduced and tested on GaN. The analysis considers the coexistence of multiple X-ray broadening terms including tilt, twist, limited coherence length, and inho
Autor:
David W. Weyburne
Publikováno v:
Heat and Mass Transfer. 44:805-813
New heat transfer coefficient approximations are developed for forced laminar flow over a uniformly heated flat plate at zero incidence angle. The development is based on solving the variable property boundary layer equations using a variable propert
Autor:
David W. Weyburne
Publikováno v:
Applied Mathematics and Computation. 175:1675-1684
A method is developed for describing the fluid boundary layer formed adjacent to a solid due to fluid flow. The method is based on the observation that for laminar flow over a flat plate, the second derivatives of the velocity and temperature in the