Zobrazeno 1 - 10 of 10 pro vyhledávání: '"David Valeri"'
2
A New Breed of Wet-Developable BARC Materials
Autor: Kevin O'Shea, Yoshihiro Yamamoto, Jin Wuk Sung, Libor Vyklicky, Pushkara Rao Varanasi, George G. Barclay, Irene Popova, James F. Cameron, Jason A. DeSISTO, Manabu Hidano, Johan Amara, David Valeri, Vaishali R. Vohra, Greg Prokopowicz, Adam Ware, Tomoki Kurihara, Kathleen M. O'Connell, Wu-Song Huang
Publikováno v: Journal of Photopolymer Science and Technology. 22:17-24
A new family of materials has been developed to serve as a wet-developable bottom antireflective coating (D-BARC) for patterning levels that have a strong need to avoid dry-etch processes for BARC-open steps. Such include some implant levels, where d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82c1c025ab30f31631633756506e17c2
https://doi.org/10.2494/photopolymer.22.17
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3
Development of molecular resist derivatives for EUV lithography
Autor: D. Patrick Green, Michael B. Clark, Steve Lakso, Michael Wagner, Vipul Jain, Brad C. Bailey, David Valeri
Publikováno v: Extreme Ultraviolet (EUV) Lithography IV.
As part of the continued effort of Dow's Electronic Materials business unit to generate novel resists for advanced semiconductor technologies, there has been a recent emphasis on the development of several new photoresists and ancillary platforms to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c47dc61bbe9dd3f26f0779885538bdf6
https://doi.org/10.1117/12.2011805
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4
Effect of leaving group design on EUV lithography performance
Autor: Jim Thackeray, Dung Quach, David Valeri, Amy Kwok, Michael Wagner, Owendi Ongayi, Vipul Jain, James F. Cameron, Suzanne Coley
Publikováno v: Extreme Ultraviolet (EUV) Lithography IV.
In this paper, we will describe some of our efforts on various leaving group designs and their impacts on resist performance, mainly focusing on the leaving group polarity, activation energy and molecular volume. The EUV lithographic performances of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::74776422be808d472e3e5af2b01d2e92
https://doi.org/10.1117/12.2011600
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5
High absorbing resists based on trifluoromethacrylate-vinyl ether copolymers for EUV lithography
Autor: Owendi Ongayi, Matthew M. Meyer, David Valeri, Matthew D. Christianson, Michael Wagner
Publikováno v: SPIE Proceedings.
Highly sensitive EUV photoresists remain a critical challenge to enable high volume manufacturing with EUV lithography. Chemically amplified resists continue to provide the best sensitivity for EUV photoresists, but the high EUV transparency of most
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51ba59409569df1a1393707b75fb610c
https://doi.org/10.1117/12.2014385
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6
Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning
Autor: David Valeri, Owendi Ongayi, Michael Wagner, Marie Hellion, Claire Sourd, James F. Cameron, Vipul Jain, Paul J. LaBeaume, B. Icard, Amy Kwok, Bernard Dalzotto, Jin Wuk Sung, Laurent Pain, Suzanne Coley, Jim Thackeray
Publikováno v: SPIE Proceedings.
Prompted by the fact that the International Technology Roadmap for Semiconductors (ITRS) has declared no proven optical solutions are available for sub 22nm hp patterning, we have investigated e-Beam and Extreme Ultraviolet (EUV) resist performance w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::624ef28d36e0dfb347365975357fdffb
https://doi.org/10.1117/12.916598
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7
High sensitivity chemically amplified EUV resists through enhanced EUV absorption
Autor: Michael Wagner, James F. Cameron, David Valeri, Amy Kwok, Matthew D. Christianson, Matthew M. Meyer, Suzanne Coley, Jim Thackeray, Owendi Ongayi
Publikováno v: SPIE Proceedings.
Resolution, line edge roughness, sensitivity and low outgassing are the key focus points for extreme ultraviolet (EUV) resist materials. Sensitivity has become increasingly important so as to address throughput concerns in device manufacturing and co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e5d3464bebe74dc5f65eb6d669e59c7
https://doi.org/10.1117/12.916482
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8
Impact of polymerization process on OOB on lithographic performance of a EUV resist
Autor: Daniel J. Arriola, David Valeri, Suzanne Coley, Amy Kwok, Nicolas Ortiz, Jung June Lee, Maria E. Danis, Su-Jin Kang, Paul J. LaBeaume, James W. Thackeray, Matthew D. Christianson, Michael Wagner, Vipul Jain
Publikováno v: SPIE Proceedings.
Several approaches have been used to minimize LWR in advanced resists. Various polymer and matrix properties, such as polymer molecular volume and free volume fraction, polymer dissolution, impact of activation energy of the deprotection reaction and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bedbbcdebcec6cb09a9f2f0429ed4acc
https://doi.org/10.1117/12.879487
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9
Design and development of production-worthy developable BARCs(DBARCs) for implant lithography
Autor: Jin Wuk Sung, Pushkara Rao Varanasi, Hiroaki Kitaguchi, James F. Cameron, Kevin O'Shea, Yoshihiro Yamamoto, Adam Ware, Irene Popova, John P. Amara, Libor Vyklicky, David Valeri
Publikováno v: SPIE Proceedings.
As device scaling continues according to Moore's Law, an ongoing theme in the semiconductor industry is the need for robust patterning solutions for advanced device manufacture. One particularly attractive solution for implant lithography is the use
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7fb16a1c3ddd6cd3636af002a47ced28
https://doi.org/10.1117/12.846708
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10
Progress towards production worthy developable BARCs (DBARCs)
Autor: Jin Wuk Sung, James F. Cameron, Gregory P. Prokopowicz, Irene Popova, Yoshihiro Yamamoto, Pushkara Rao Varanasi, Adam Ware, Wu-Song Huang, Tomoki Kurihara, John P. Amara, Libor Vyklicky, Kevin O'Shea, David Valeri
Publikováno v: Advances in Resist Materials and Processing Technology XXVI.
Developable bottom anti-reflective coating (DBARC) technology holds promise in two main areas of lithography. The first application of DBARC is in implant lithography where patterning implant levels would greatly benefit from improved reflection cont
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a7d73305d9579124ea64fa11eb660bf
https://doi.org/10.1117/12.814421
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