Zobrazeno 1 - 10
of 12
pro vyhledávání: '"David V. Horak"'
Autor:
Masao Ishikawa, Joseph Linville, Yunpeng Yin, Jeremiah T. Pender, A. Darlak, Kevin Zhou, John C. Arnold, Ravi Prakash Srivastava, Ryan Patz, Nicholas C. M. Fuller, Yifeng Zhou, Hakeem Yusuff, David V. Horak, Yann Mignot, Catherine B. Labelle
Publikováno v:
ECS Transactions. 34:329-334
The challenges facing back-end-of-line (BEOL) etch are becoming increasingly difficult as shrinking dimensions are compounded by new materials integration. As critical dimensions decrease, key dimension-related etch challenges include CD control, tre
Autor:
Sohan Singh Mehta, Yunpeng Yin, Yannick Loquet, Chiahsun Tseng, Peggy Lawson, Chen Jim C, Shinichiro Kawakami, Dave Hetzer, Sean D. Burns, Matthew E. Colburn, Mark Kelling, Vikrant Chauhan, Lior Huli, Shyng-Tsong Chen, Jerome Wandell, Guillaume Landie, Martin Glodde, Bassem Hamieh, Chiew-seng Koay, Yongan Xu, Shannon Dunn, Alvin G. Thomas, John C. Arnold, Terry A. Spooner, Jeong Soo Kim, Yuyang Sun, Martin Burkhardt, David V. Horak, Hirokazu Kato, Yoshinori Matsui, Jason Cantone, Mignot Yann
Publikováno v:
SPIE Proceedings.
The objective of this work is to describe the advances in 193nm photoresists using negative tone developer and key challenges associated with 20nm and beyond technology nodes. Unlike positive tone resists which use protected polymer as the etch block
Autor:
Ronald A. Della Guardia, Rex Chen, Mark Slezak, Rao Varanasi, Steven J. Holmes, Nicolette Fender, Stefan Harrer, Sebastian Engelmann, Shyng-Tsong Chen, Eric A. Joseph, David V. Horak, Matthew E. Colburn, Dario L. Goldfarb, Yunpeng Yin, John C. Arnold, Cherry Tang
Publikováno v:
SPIE Proceedings.
A novel back-end-of-line (BEOL) patterning and integration process termed Multi-Level Multiple Exposure (MLME) technique is herein introduced. The MLME technique simplifies BEOL dual damascene (DD) integration while simultaneously being applicable to
Autor:
Merritt Funk, Qingyun Yang, Joyce C. Liu, Matthew Sendelbach, Jeffrey S. Brown, Daniel J. Prager, Peter E. Cottrell, David V. Horak, Eric P. Solecky, Randy W. Mann, Sadanand V. Deshpande, Wesley C. Natzle, F. Higuchi, Chienfan Yu, Hussein I. Hanafi, Akihisa Sekiguchi, Subramanian S. Iyer, W. Yan, Bruce B. Doris, Masayuki Tomoyasu, James P. Norum, Len Y. Tsou, Asao Yamashita, Hiroyuki Takahashi
Publikováno v:
2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530).
A method for formation and control of silicon gates or fins uses trim of a hard mask by a new gaseous oxide etch. The method decouples final feature size from lithography and from the RIE resist trim/oxide mask open processes. Logic blocks with two s
Autor:
Steven J. Holmes, Paul A. Rabidoux, Christopher J. Progler, Alfred K. K. Wong, Ben R. Vampatella, David V. Horak, Scott M. Mansfield, Deborah A. Ryan, Richard A. Ferguson, Lars W. Liebmann, Peter Talvi, Allen H. Gabor, Sadanand V. Deshpande, Timothy A. Brunner, Chen Jia, Qingyun Yang, Chienfan Yu, Norman Chen, Len Y. Tsou, Antoinette F. Molless
Publikováno v:
SPIE Proceedings.
The line-width variation of a 193 nm lithographic process utilizing a 0.60 NA scanner and a binary reticle is compared to that of a 248 nm lithographic processes utilizing a 0.68 NA scanner and a variety of reticle technologies. These include binary,
Autor:
Mark C. Hakey, David V. Horak, Steven J. Holmes, Paul A. Rabidoux, Toshiharu Furukawa, Mahmoud Khojasteh, Wu-Song Huang, Niranjan M. Patel, K. Rex Chen
Publikováno v:
SPIE Proceedings.
Lithographic scaling entails continuously increasing resolution while at the same time improving the tolerance control on the printed images. Typically, this has been done by using shorter actinic wavelengths, increasing numerical aperture, compensat
Publikováno v:
Multichamber and In-Situ Processing of Electronic Materials.
Each generation of VLSI semiconductor technology is more complex than the previous generation. Therefore, to help minimize manufacturing costs, turnaround time and defect levels, process clustering has become an attractive alternative to traditional,
Autor:
Albert Bergendahi, David V. Horak
Publikováno v:
Multichamber and In-Situ Processing of Electronic Materials.
Multichamber and in-situ technology are used to meet the challenge of manufacturing 16-Mb cost/per-formance DRAMs. The 16-Mb fabrication process is more complex than earlier 1-Mb and 4-Mb chips. Clustering of sequential process steps effectively comp
Publikováno v:
Journal of the American Chemical Society. 101:2136-2139
Autor:
David V. Horak, John S. Winn
Publikováno v:
The Journal of Physical Chemistry. 87:265-271
A crossed vacuum-UV photon-Fe(CO)/sub 5/ molecular beam experiment was used to study the Fe* emission and the Fe(CO)/sub 5/ photoionization yields induced by vacuum-UV photons in the 9-21-eV range. Fe emission from quintet spin states was observed, a