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pro vyhledávání: '"David Tröger"'
Publikováno v:
Journal of Physics D: Applied Physics. 54:275304
The origin of the commonly observed negative fixed charge density (Q fix) in atomic layer deposited (ALD-)aluminium oxide is still a matter of debate despite its widespread applications in (opto-)electronics, particularly in silicon photovoltaics. Q
Publikováno v:
Solar Energy Materials and Solar Cells. 215:110651
Full area transparent contacts are the next step in order to enhance the efficiency of silicon based passivated emitter rear cells. Here we present a full area contact based on Al2O3 and reduced TiOx. The thin Al2O3 acts as passivating tunneling laye
Autor:
Thomas Mikolajick, Matthias Grube, Johann W. Bartha, Martin Knaut, Johanna Reif, David Tröger
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
In order to remove the local openings for contacting PERC Solar cells, one has to introduce passivating contacts. The Al 2 O 3 -TiO x double layer stack is an attractive candidate for this purpose. This study will guide a way to enhance the conductiv
Autor:
Daniel Schondelmaier, Felix R. P. Limberg, Alexander Strobel, Dirk Hildebrand, Steffi Proschwitz, Hartmut Krüger, David Tröger
This paper presents a low-cost and high-throughput process for nanoscale imprinting of a novel thermally cross-linkable polymer via laser interference lithography. This technique was applied to produce the highly periodic nanometer structures such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::575bc257ecc7714b2082e0e6043931e4
https://publica.fraunhofer.de/handle/publica/246272
https://publica.fraunhofer.de/handle/publica/246272
Autor:
Tony Schenk, Daniel K. Simon, Paul M. Jordan, Andreas Krause, David Tröger, Franz P. G. Fengler, Ingo Dirnstorfer, Thomas Mikolajick
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:021503
Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morph