Zobrazeno 1 - 7
of 7
pro vyhledávání: '"David T. Mathes"'
Publikováno v:
SPIE Proceedings.
In 2007 Finisar® completed the transfer of an entire epitaxial and fabrication line from one facility to another. During this period, reliability models had to be re-validated and product continuity maintained. In this paper we describe the activiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0cf93125a645c5314919730c6c42489
https://doi.org/10.1117/12.771311
https://doi.org/10.1117/12.771311
Autor:
David T. Mathes, Christopher William Johnson, Bobby Hawkins, Bobby Hawthorne, Jim A. Tatum, J.K. Guenter, Ralph H. Johnson
Publikováno v:
SPIE Proceedings.
After some thirty years of materials analyses into the failure behavior of III-V semiconductor lasers, manufacturers of these devices still regularly encounter new failure mechanisms. This is due mainly to the implementation of progressively more com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::525125cc37e237d88488bdeb35a06695
https://doi.org/10.1117/12.646447
https://doi.org/10.1117/12.646447
Autor:
Bobby Hawkins, Ralph H. Johnson, Robert A. Hawthorne, James K. Guenter, Jim A. Tatum, David T. Mathes
Publikováno v:
SPIE Proceedings.
During a year of substantial consolidation in the VCSEL industry, Honeywell sold their VCSEL Optical Products Division, which has now officially changed its name to Advanced Optical Components (AOC). Both manufacture and applied research continue, ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::237c845ae89464e59ef06d0ca85c4078
https://doi.org/10.1117/12.601831
https://doi.org/10.1117/12.601831
Publikováno v:
SPIE Proceedings.
Honeywell continues to be the world’s leading supplier of VCSELs operating at 850 nm. This paper will cover new commercial application areas for 850-nm VCSELs, and will present new findings in VCSEL reliability science. In particular, newly-develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8edf6e821e47133ed805f02693f717f8
https://doi.org/10.1117/12.540129
https://doi.org/10.1117/12.540129
Autor:
Bobby Hawkins, Robert A. Hawthorne, Andrew A. Allerman, James K. Guenter, Kent M. Geib, Kent D. Choquette, David T. Mathes, Robert Hull
Publikováno v:
SPIE Proceedings.
Significant advancements have been made in the characterization and understanding of the degradation behavior of the III-V semiconductor materials employed in Vertical Cavity Surface Emitting Laser (VCSEL) diodes. Briefly, for the first time a techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3c3d4b515d793e549b2697ce0cd993
https://doi.org/10.1117/12.482858
https://doi.org/10.1117/12.482858
Autor:
James Orenstein, Ralph H. Johnson, David T. Mathes, Terry Marta, Edith Kalweit, Joe Gieske, Tzu-Yu Wang, Virgil J. Blasingame, Jim A. Tatum, Gyoungwon Park, Jin K. Kim, Mike D. Ringle, Helen M. Chanhvongsak, Jae-Hyun Ryou, Bo-Su Chen, Hoki Kwon
Publikováno v:
SPIE Proceedings.
In this paper we describe both the 1310 and 1550 nm VCSEL development work at Honeywell using both InP and GaAs substrates, and using both MOCVD and MBE. We describe the material systems, the designs, the growth techniques, and the promising results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6169fab265e72ced443bc1aac3a266ea
https://doi.org/10.1117/12.488221
https://doi.org/10.1117/12.488221
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