Zobrazeno 1 - 9
of 9
pro vyhledávání: '"David Simco"'
Autor:
Ty McNutt, Kraig Olejniczak, Ajith Wijenayake, Jonathan Hayes, Stephen Minden, Daniel Martin, David Simco
Publikováno v:
Materials Science Forum. 924:883-886
This paper extends a previously presented SiC power module design philosophy to critical, higher-level components for increased system performance, namely the DC bussing and DC link capacitor design. The DC bussing is essential to connect the DC bulk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48299596964453dd65ef7d5de9c4d453
https://doi.org/10.4028/www.scientific.net/msf.924.883
https://doi.org/10.4028/www.scientific.net/msf.924.883
Publikováno v:
Materials Science Forum. 924:866-870
This paper discusses Wolfspeed’s advances in silicon carbide (SiC) power module packaging, focusing on recent developments in advanced power module heat transfer techniques, the integration of pinfin mechanical structures, and the implementation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2a17a138e8c12a978908d3f85d23a3c
https://doi.org/10.4028/www.scientific.net/msf.924.866
https://doi.org/10.4028/www.scientific.net/msf.924.866
Autor:
Brandon Passmore, Robert Shaw, Ty McNutt, Jeff B. Casady, David Simco, Kraig Olejniczak, Tom Flint, Ajith Wijenayake, Brett Hull, Daniel Martin, Austin Curbow
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This paper reports on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94108951cf871dc0a931a7c4b6a914d
https://doi.org/10.1109/wipda.2017.8170569
https://doi.org/10.1109/wipda.2017.8170569
Autor:
Brandon Passmore, Matthew Feurtado, Alex Lostetter, David Simco, Ty McNutt, Kraig Olejniczak, Ajith Wijenayake, Stephen Minden, Daniel Martin
Publikováno v:
2017 IEEE Energy Conversion Congress and Exposition (ECCE).
Silicon carbide (SiC) power semiconductor technology has successfully penetrated several silicon (Si) application markets and is gaining momentum due to higher voltage withstand capability, higher switching capabilities (i.e., 100s of kHz), and abili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eedf91fe5a75c1db37269c0e5b631d6a
https://doi.org/10.1109/ecce.2017.8095886
https://doi.org/10.1109/ecce.2017.8095886
Publikováno v:
2017 IEEE International Workshop On Integrated Power Packaging (IWIPP).
Silicon Carbide (SiC) wide band gap power devices are capable of operating at extremely high current densities and switching frequencies. Systems embracing these benefits can achieve a substantial increase in power density. However, cooling becomes e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516c86687afd915dc7f7091e1d9011f2
https://doi.org/10.1109/iwipp.2017.7936760
https://doi.org/10.1109/iwipp.2017.7936760
Autor:
R. Shaw, Ty McNutt, Kenny George, David Simco, Brandon Passmore, B. McGee, S. Storkov, Kraig Olejniczak, W. Austin Curbow, T. Flint
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
Wide bandgap materials are having a transformational impact on the electrical, thermal, and mechanical performance of military, industrial, and commercial power electronic systems where silicon (Si) power semiconductors are the present material techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0181b5914e285b62a6788902d8e6852c
https://doi.org/10.1109/apec.2017.7930776
https://doi.org/10.1109/apec.2017.7930776
Autor:
B. McGee, S. Storkov, R. Shaw, G. Falling, Brandon Passmore, Kraig Olejniczak, W. Austin Curbow, J. Stabach, Peter Killeen, David Simco, T. Flint
Publikováno v:
2015 IEEE Energy Conversion Congress and Exposition (ECCE).
Over the past decade, wide bandgap power devices have demonstrated superior electrical and thermal characteristics over Si-based devices at not only the die level but also when integrated into systems. In this paper, a high current 650 V GaN-based po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a0f0fdbf7ebe8971a1788f292a4781c
https://doi.org/10.1109/ecce.2015.7310298
https://doi.org/10.1109/ecce.2015.7310298
Autor:
Sergei Storkov, Austin Curbow, Ty McNutt, Kraig Olejniczak, Kenny George, Tom Flint, Robert Shaw, Brandon Passmore, Peter Killeen, David Simco, Brad McGee
Publikováno v:
Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays.
In this paper, we describe the system-level packaging of a 30 kW continuous, 55 kW peak, traction inverter to showcase the electro-thermal-mechanical performance enhancements of silicon carbide (SiC), a wide bandgap (WBG) semiconductor, over silicon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08244b7a408a78d8479ad218eca76a86
https://doi.org/10.1115/ipack2015-48602
https://doi.org/10.1115/ipack2015-48602
Autor:
Robert Stahlbush, Philip G. Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars J. Lelis
ICSCRM 2017Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA
