Zobrazeno 1 - 1
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pro vyhledávání: '"David Scott Lowrie"'
Autor:
Han-Sheng Lee, David Scott Lowrie
Publikováno v:
Solid-State Electronics. 24:267-273
A computer simulated substrate response of an n -channel MOS floating gate transistor to a positive linear ramping gate voltage was investigated. Device parameters, such as the channel length, effective electron mobility, substrate doping level and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d0785d3bfd429a433d47ed659b93b58
https://doi.org/10.1016/0038-1101(81)90090-3
https://doi.org/10.1016/0038-1101(81)90090-3
