Zobrazeno 1 - 10
of 21
pro vyhledávání: '"David S. Sukhdeo"'
Publikováno v:
Optics Communications. 379:32-35
We theoretically investigate the effect of uniaxial strain on a Ge-on-Si laser. We predict a dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to Ge. This anomalous reduction is explained by how the topmost valence b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc92276d0e7b98eac6066ba56ce3961
https://doi.org/10.1016/j.optcom.2016.05.030
https://doi.org/10.1016/j.optcom.2016.05.030
Autor:
Sonia Buckley, Shashank Gupta, Alexander Y. Piggott, Krishna C. Saraswat, Donguk Nam, Jan Petykiewicz, David S. Sukhdeo, Jelena Vuckovic
Publikováno v:
Nano Letters. 16:2168-2173
A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::356f5b0e4f2060bec6aa49efd52ef7f4
https://doi.org/10.1021/acs.nanolett.5b03976
https://doi.org/10.1021/acs.nanolett.5b03976
Publikováno v:
ECS Transactions. 64:371-381
In this paper, we focus on developing an efficient silicon compatible light emitter based on highly-strained germanium technology. We present various experimental results showing enhanced light emission from strained germanium. First, we describe a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a78076346010328b7240fbc9c958ad
https://doi.org/10.1149/06406.0371ecst
https://doi.org/10.1149/06406.0371ecst
Autor:
Shashank Gupta, Krishna C. Saraswat, David S. Sukhdeo, Mark L. Brongersma, Donguk Nam, Ju-Hyung Kang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:16-22
In this paper, we present a comprehensive study of carrier statistics in germanium with high uniaxial strain along the [100] direction. Several types of PL experiments were conducted to investigate polarization-, temperature- and excitation-dependent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fa4077a6736c77f47bb0f1b7f99bd8a
https://doi.org/10.1109/jstqe.2013.2293764
https://doi.org/10.1109/jstqe.2013.2293764
Autor:
Jelena Vuckovic, David S. Sukhdeo, Shashank Gupta, Donguk Nam, Jan Petykiewicz, Krishna C. Saraswat
Publikováno v:
2016 IEEE Photonics Conference (IPC).
A dramatic and previously overlooked interaction of parasitic absorption with strain in germanium (Ge) is demonstrated through extensive simulations and experiments. Uniaxial strain of 4–5% and biaxial strain greater than 1% are the best candidates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0236790213a40dc4e541f9ac743780b
https://doi.org/10.1109/ipcon.2016.7830992
https://doi.org/10.1109/ipcon.2016.7830992
Autor:
Krishna C. Saraswat, Donguk Nam, Sonia Buckley, Jan Petykiewicz, David S. Sukhdeo, Shashank Gupta, Jelena Vuckovic
Publikováno v:
2015 IEEE 12th International Conference on Group IV Photonics (GFP).
We present a novel structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer. Employing our structure in a GeSn layer will enable a truly practical Si-compatible laser.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f432f0b9bec0c12967cd402c7b0ab5e
https://doi.org/10.1109/group4.2015.7305989
https://doi.org/10.1109/group4.2015.7305989
Publikováno v:
OPTICS EXPRESS(23): 13
Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7178e6968a1b552409c01845396fa8b1
https://pubmed.ncbi.nlm.nih.gov/26191686
https://pubmed.ncbi.nlm.nih.gov/26191686
We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhanceme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::118018e1d16d486a5497a2feacb97bdf
http://arxiv.org/abs/1506.08539
http://arxiv.org/abs/1506.08539
Autor:
Sungdae Woo, Krishna C. Saraswat, Daeik Kim, Jelena Vuckovic, Youngmin Kim, David S. Sukhdeo, Shashank Gupta, Jan Petykiewicz, Donguk Nam
We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83d708a3ff5fd5878da1058df48a0a01
We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect of tin all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4e9ba4e0f4f565892a3a3b7912b59dc