Zobrazeno 1 - 10
of 34
pro vyhledávání: '"David Russell Hughart"'
Autor:
A. Alec Talin, T. Patrick Xiao, Christopher H. Bennett, Helmut Puchner, David Russell Hughart, Matthew J. Marinella, Hugh J. Barnaby, Sapan Agarwal
Publikováno v:
IEEE Transactions on Nuclear Science. 69:406-413
Autor:
Jack E. Manuel, Yihan Liu, Can Cui, Gyorgy Vizkelethy, Jean Anne C. Incorvia, Mahshid Alamdar, Edward S. Bielejec, Robin B. Jacobs-Gedrim, Paul G. Kotula, Raluca Gearba-Dolocan, Christopher H. Bennett, Matthew J. Marinella, Liang Juan Chang, T. Patrick Xiao, Karalee Jarvis, David Russell Hughart, Enrique Antunano, Lin Xue
Publikováno v:
IEEE Transactions on Nuclear Science. 68:665-670
We study the impact of irradiation on magnetic tunnel junction (MTJ) films with perpendicular magnetic anisotropy (PMA) and spin–orbit torque (SOT) switching using magneto-optical Kerr effect and transmission electron microscopy. Our results show t
Autor:
David Russell Hughart, Christopher H. Bennett, Venkatraman Prabhakar, Matthew J. Marinella, Helmut Puchner, A. Alec Talin, Hugh J. Barnaby, T. Patrick Xiao, Sapan Agarwal
Publikováno v:
IEEE Transactions on Nuclear Science. 68:762-769
We evaluate the sensitivity of neuromorphic inference accelerators based on silicon-oxide-nitride-oxide-silicon (SONOS) charge trap memory arrays to total ionizing dose (TID) effects. Data retention statistics were collected for 16 Mbit of 40-nm SONO
Autor:
Nadia Suguitan, Jean Yang-Scharlotta, Karsten Beckmann, Edward S. Bielejec, Sierra Russell, David Russell Hughart, Evan Iler, Matthew J. Marinella, Zahiruddin Alamgir, Joshua S. Holt, Nathaniel C. Cady, Hassaram Bakhru, Robin B. Jacobs-Gedrim
Publikováno v:
IEEE Transactions on Nuclear Science. 66:2398-2407
The radiation response of TaO x -based resistive memory (RRAM) devices fabricated in academic (Set A) and industrial (Set B) settings was compared. Ionization damage from a 60Co gamma source did not cause any changes in device resistance for either d
Autor:
David Russell Hughart, Sapan Agarwal, B. L. Vaandrager, Edward S. Bielejec, G. Vizkelethy, Scot E. Swanson, J. L. Taggart, K. E. Knisely, Matthew J. Marinella, Hugh J. Barnaby, Robin B. Jacobs-Gedrim
Publikováno v:
IEEE Transactions on Nuclear Science. 66:54-60
The image classification accuracy of a TaO x ReRAM-based neuromorphic computing accelerator is evaluated after intentionally inducing a displacement damage up to a fluence of 1014 2.5-MeV Si ions/cm2 on the analog devices that are used to store weigh
Publikováno v:
2020 IEEE International Integrated Reliability Workshop (IIRW).
We report electrically detected magnetic resonance (EDMR) results in $\mathrm{S}\mathrm{i}/\mathrm{S}\mathrm{i}\mathrm{O}_{2}$ metal-oxidesemiconductor field effect transistors before and after high field gate stressing. The measurements utilize EDMR
Autor:
T. Patrick Xiao, Matthew J. Marinella, David Russell Hughart, Robin B. Jacobs-Gedrim, Jijun Sun, Gyorgy Vizkelethy, Edward S. Bielejec, Christopher H. Bennett, Sanjeev Aggarwal, Frederick B. Mancoff, Reza Arghavani, Jack E. Manuel
Publikováno v:
Proposed for presentation at the Nuclear & Space Radiation Effects Conference held November 29 - December 30, 2020 in Santa Fe, NM, US..
We evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) to displacement damage induced by heavy-ion irradiation. MTJs were exposed to 3-MeV Ta2+ ions at different levels of ion beam
Autor:
Christopher H. Bennett, Andrew M. Tonigan, David Russell Hughart, Matthew Marinella, Robert A. Weller, Robert A. Reed, Ronald D. Schrimpf, Joseph G. Salas, Madeline Esposito, Dolores A. Black, Michael Lee McLain, Dennis R. Ball, Jeffrey D. Black, M. L. Breeding
Publikováno v:
Proposed for presentation at the Radiation and its Effects on Components and Systems (RADECS) 2020 held October 19 - November 20, 2020 in Virtual, Virtual, Virtual..
Autor:
Conrad D. James, Alex Hsia, David Russell Hughart, Matthew J. Marinella, Richard Louis Schiek, Sapan Agarwal, John Niroula, Robin B. Jacobs-Gedrim
Publikováno v:
Journal of Computational Electronics. 16:1144-1153
With the end of Dennard scaling and the ever-increasing need for more efficient, faster computation, resistive switching devices (ReRAM), often referred to as memristors, are a promising candidate for next generation computer hardware. These devices
Autor:
Matthew J. Marinella, Michael S. Van Heukelom, Elliot J. Fuller, Sapan Agarwal, Yiyang Li, Robin B. Jacobs-Gedrim, A. Alec Talin, David Russell Hughart, Christopher H. Bennett, Alex Hsia
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Analog crossbars have the potential to reduce the energy and latency required to train a neural network by three orders of magnitude when compared to an optimized digital ASIC. The crossbar simulator, CrossSim, can be used to model device nonidealiti