Zobrazeno 1 - 4
of 4
pro vyhledávání: '"David Runton"'
Publikováno v:
IEEE Microwave Magazine. 14:82-93
In the early 1990s, gallium nitride (GaN) was deemed an excellent, next generation, semiconductor material for high power/high frequency transistors based on the material parameters of bandgap, electron mobility, and saturated electron velocity (Figu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50fbb649d821c389bf706a45b8c719f7
https://doi.org/10.1109/mmm.2013.2240853
https://doi.org/10.1109/mmm.2013.2240853
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
Next generation commercial and military systems require high power amplifiers (HPAs) with superior performance such as higher efficiency, improved thermal performance, wider bandwidth and higher output power. Using an optimized 0.5um, 48V GaN-on-SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a219d9ee51c0265d7bbbd45a49312e
https://doi.org/10.1109/bipol.2009.5314127
https://doi.org/10.1109/bipol.2009.5314127
Publisher Summary One of the biggest issues related to radio frequency (RF) power amplifiers in a base station is the linearity requirement. Nonlinearities within the system components of the radio equipment cause distortion of the transmitted signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac5de2d5c68b7295af91ff6b6917296d
https://doi.org/10.1016/b978-075067695-3/50011-2
https://doi.org/10.1016/b978-075067695-3/50011-2
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