Zobrazeno 1 - 10
of 12
pro vyhledávání: '"David Rentkiewicz"'
Autor:
Guanyang Lin, Francis M. Houlihan, Simon Chiu, Muthiah Thiyqarqjan, Dougls Mackenzie, Andrew Romano, Clement Anyadiegwu, Takanori Kudo, Allen G. Timko, David Rentkiewicz, Dalil Rahman, Rqlph R. Dammel, Murirathna Padmanaban
Publikováno v:
Journal of Photopolymer Science and Technology. 19:327-334
We will give an account of our investigation on structure property relationships of amines with regards to line width roughness (LWR) and line edge roughness (LER) of a 193 nm alicyclic-acrylate resist. Specifically, we have looked at basicity, molar
Autor:
Chisun Hong, David Rentkiewicz, Dongkwa Lee, Dalil Rahman, Murirathna Padmanaban, Raj Sakamuri, Ralph R. Dammel
Publikováno v:
Journal of Photopolymer Science and Technology. 18:451-456
Line-edge roughness (LER) & line-width roughness (LWR) poses serious problems for the device performance and CD error budget for sub 100nm design rules. Illumination conditions, pitch, resist formulations, resist process conditions, substrates have s
Autor:
David Rentkiewicz, Masato Shigematus, U. Mierau Inge. Vermeir, M. Market, Nickolay Stephanko, Francis M. Houlihan, Daniel Miller, Etsuo Kawaguchi, Andrew R. Romano, Toshiro Itani, Ralph R. Dammel, Raj Sakamuri, Christoph Hohle, Sill Conley
Publikováno v:
Journal of Photopolymer Science and Technology. 17:621-630
Further work is described on a new generation of more transparent, 157 nm resist platforms, which are based upon capping of fluoroalcohol-substituted, transparent perfluorinated resins (TFR) with a tert-butoxycarbonylmethyl (BOCME) moiety. By optimiz
Publikováno v:
Journal of Photopolymer Science and Technology. 17:587-601
This paper reviews the current status and future outlook of materials for 193 nm immersion lithography, with special focus on top barrier layers, photoresists, bottom antireflective coatings for numerical apertures exceeding unity, and future challen
Autor:
Guanyang Lin, Dongkwan Lee, Clement Anyadiegwu, Dalil Rahman, John J. Biafore, Frank Houlihan, Simon Chiu, Munirathna Padmanaban, Douglas Mckenzie, Allen Timko, Takanori Kudo, Ralph R. Dammel, David Rentkiewicz
Publikováno v:
SPIE Proceedings.
This paper introduces high performing contact hole resist targeting 65 nm node and below IC applications. Both 80 nm and 100 nm contact hole performance are evaluated under optimized condition by Prolith TM simulations and the advantage of the shrink
Autor:
Takanori Kudo, M. Dalil Rahman, Allen Timko, Ralph R. Dammel, Douglas Mckenzie, David Rentkiewicz, Frank Houlihan, Munirathna Padmanaban, Guanyang Lin, Clement Anyadiegwu, Srivanisan Chakrapani
Publikováno v:
SPIE Proceedings.
A high performance 193 nm resist has been developed from a novel hybrid copolymer based on a cycloolefin-maleic anhydride and methacrylate (COMA/Methacrylate) polymer system. A variety of copolymers have been synthesized from t-butyl norbornene carbo
Autor:
Ralph R. Dammel, Guanyang Lin, Muthiah Thiyagarajan, Dalil Rahman, Simon Chiu, Munirathna Padmanaban, Takanori Kudo, Douglas Mackenzie, Allen Timko, David Rentkiewicz, Andrew Romano, Clement Anyadiegwu, Francis M. Houlihan
Publikováno v:
SPIE Proceedings.
We will give an account of our investigation on structure property relationships of amines with regards to line width roughness (LWR) and line edge roughness (LER) of a 193 nm alicyclic-acrylate resist. Specifically, we have looked at basicity, molar
Autor:
Yayi Wei, Toshiro Itani, Ralph R. Dammel, David Rentkiewicz, Nickolay Stepanenko, Alla Dimerli, Michael Sebald, Christoph Hohle, Etsuro Kawaguchi, Raj Sakamuri, Daniel Miller, Will Conley, Masato Shigematsu, Andrew Romano, Francis M. Houlihan, Keino Hamilton
Publikováno v:
SPIE Proceedings.
We summarize our work on devising protective barrier coats for use against airborne contamination when using tert-butoxycarbonylmethyl (BOCME) capped fluoroalcohol resist resins as part of our strategy to develop a 157 nm resist platform. We will des
Autor:
David Rentkiewicz, Munirathna Padmanaban, Dalil Rahman, Ralph R. Dammel, SangHo Lee, Chisun Hong, Dongkwan Lee, Raj Sakamuri
Publikováno v:
SPIE Proceedings.
Line-edge roughness (LER) continues to be one of the biggest challenges as the CD size shrinks down to sub 100 nm. It is shown that resist components as well as illumination conditions play a big role. Influence of resist components in both 248 and 1
Autor:
Christoph Hohle, David Rentkiewicz, Nickolay Stepanenko, Etsuro Kawaguchi, Matthias Markert, Michael Sebald, Andrew Romano, Will Conley, Toshiro Itani, Inge Vermeir, Raj Sakamuri, Masato Shigematsu, Francis M. Houlihan, Uta Mierau, Daniel Miller, Ralph R. Dammel
Publikováno v:
SPIE Proceedings.
This paper is part of our continuing work on a new generation of more transparent, 157 nm resist platforms, which are based upon capping of fluoroalcohol-substituted, transparent perfluorinated resins (TFR) with a tert-butoxycarbonylmethyl (BOCME) mo