Zobrazeno 1 - 10
of 27
pro vyhledávání: '"David Rennie"'
Autor:
David Rennie
Publikováno v:
American Literary Realism. 52:181-183
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c97866ee48e9e4bda315688d7cc471c
https://doi.org/10.5406/amerlitereal.52.2.0181
https://doi.org/10.5406/amerlitereal.52.2.0181
Autor:
Niklas Salmose, David Rennie
A comprehensive study of the life of F. Scott Fitzgerald, related in two-year chapters by twenty-three leading writers on the Jazz Age author “There never was a good biography of a novelist,” F. Scott Fitzgerald wrote in The Crack-Up. “There co
Autor:
David Rennie
Publikováno v:
The F. Scott Fitzgerald Review. 14:181-197
Scholars have spoken of Tender Is the Night as marking Fitzgerald's most “mature” representation of World War I in his fiction. This article, however, argues that all of the main facets of Fitzgerald's depiction of World War I in Tender Is the Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ec2e4fc5457b8c9387f59d0171581ef
https://doi.org/10.5325/fscotfitzrevi.14.1.0181
https://doi.org/10.5325/fscotfitzrevi.14.1.0181
Autor:
David Li, Bharat L. Bhuva, Manoj Sachdev, Rick Wong, David Rennie, Shi-Jie Wen, S. Jagannathan
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 59:1626-1634
In modern CMOS processes, soft errors and metastability are two prominent failure mechanisms. Radiation induced single event upsets, or soft-errors, have become a dominant failure mechanism in sub-100 nm CMOS memory and logic circuits. The effects of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2908b08cb04324e0a734bf513314be20
https://doi.org/10.1109/tcsi.2012.2206505
https://doi.org/10.1109/tcsi.2012.2206505
Autor:
Rick Wong, Manoj Sachdev, T. D. Loveless, S.-J. Wen, Bharat L. Bhuva, S. Jagannathan, Lloyd W. Massengill, David Rennie
Publikováno v:
IEEE Transactions on Nuclear Science. 58:3033-3037
In this paper, the radiation response of a single-event tolerant flip-flop design named the Quatro flip-flop is presented. Circuit level simulations on the flip-flop design show 1) the critical charge of the sensitive nodes to be greater than that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fec55ef0e2486cebcb8aefcf21e46c6
https://doi.org/10.1109/tns.2011.2170201
https://doi.org/10.1109/tns.2011.2170201
Autor:
Manoj Sachdev, David Rennie
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2470-2476
Cosmic neutron-induced single event upsets have become a dominant failure mechanism in sub-100 nm CMOS memory and logic circuits. In this paper two SEU-robust flip-flops are described which are based on a hardened storage cell, known as the Quatro ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8457ecfd7659076a63e3977f170ef6e
https://doi.org/10.1109/tns.2011.2162745
https://doi.org/10.1109/tns.2011.2162745
Autor:
Trey Reece, T. D. Loveless, Lloyd W. Massengill, Jugantor Chetia, Michael W. McCurdy, Bharat L. Bhuva, S.-J. Wen, David Rennie, S. Jagannathan, Rick Wong
Publikováno v:
IEEE Transactions on Nuclear Science. 58:1008-1014
Neutron- and proton-induced single-event upset cross sections of D- and DICE-Flip/Flops are analyzed for designs implemented in a 40 nm bulk technology node. Neutron and proton testing of the flip/flops show only a 30%-50% difference between D- and D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c996d95bfc82ab20f61c1f3be69e32
https://doi.org/10.1109/tns.2011.2123918
https://doi.org/10.1109/tns.2011.2123918
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3768-3773
We propose a quad-node ten transistor (10 T) soft error robust SRAM cell that offers differential read operation for robust sensing. The cell exhibits larger noise margin in sub-0.45 V regime and 26% less leakage current than the traditional soft err
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1723d6becba572c7dc76ab5257e20c5
https://doi.org/10.1109/tns.2009.2032090
https://doi.org/10.1109/tns.2009.2032090
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2543-2553
This paper presents an SRAM architecture employing a multiword-based ECC (MECC) scheme for soft error mitigation and a row virtual ground technique for array leakage reduction. The MECC combines four data words to form a 128 bit composite ECC word, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8f6b8259bda570bc1e6fb924e686d22
https://doi.org/10.1109/jssc.2009.2021088
https://doi.org/10.1109/jssc.2009.2021088