Zobrazeno 1 - 3
of 3
pro vyhledávání: '"David R. Zywotko"'
Publikováno v:
Chemistry of Materials. 32:10055-10065
A ZrO2 monolayer was demonstrated as a removable etch stop layer (ESL) for thermal Al2O3 atomic layer etching (ALE) using HF and Al(CH3)3 (trimethylaluminum (TMA)) as the reactants. The ZrO2 ESL wa...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb5c68174213bea2b8b023e4ace59034
https://doi.org/10.1021/acs.chemmater.0c03335
https://doi.org/10.1021/acs.chemmater.0c03335
Autor:
Steven M. George, David R. Zywotko
Publikováno v:
Chemistry of Materials. 29:1183-1191
The atomic layer etching (ALE) of ZnO thin films was demonstrated using sequential, self-limiting thermal reactions with hydrogen fluoride (HF) and trimethylaluminum (TMA) as the reactants. The initial polycrystalline ZnO films were grown by atomic l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c35e6465bc7f48c356dfcbbee0c07d46
https://doi.org/10.1021/acs.chemmater.6b04529
https://doi.org/10.1021/acs.chemmater.6b04529
Publikováno v:
Journal of Vacuum Science & Technology A. 36:061508
A dramatic increase in the Al2O3 atomic layer etching (ALE) rate versus time was demonstrated using sequential, self-limiting exposures of hydrogen fluoride (HF) and trimethylaluminum (TMA) as the reactants with no purging. The normal purging expecte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ec10604c6aaa27fe8b125f1504cb6b1
https://doi.org/10.1116/1.5043488
https://doi.org/10.1116/1.5043488