Zobrazeno 1 - 8
of 8
pro vyhledávání: '"David Patchett"'
Autor:
Ellen Meltzer, Laurie Wilshusen, Isra Abdulwadood, Claire Yee, Amy Sherman, Kelli Strader, Barbara Thomley, Denise Millstine, Jon Tilburt, Heather Fields, Larry Bergstrom, David Patchett, John Camoriano, Brent Bauer
Publikováno v:
JMIR Formative Research, Vol 8, p e56312 (2024)
BackgroundThe use of telemedicine (TELE) increased exponentially during the COVID-19 pandemic. While patient experience with TELE has been studied in other medical disciplines, its impact and applicability to integrative medicine practices remain unk
Externí odkaz:
https://doaj.org/article/68e2ca07faa94d0bbe5693de9ea8d55e
Autor:
David Patchett, DO, FACOFP, Juan Yang, MD, PhD, Jane Northern, APRN, FNP-BC, MS, Manisha Salinas, DrPH, Brent A. Bauer, MD
Publikováno v:
Mayo Clinic Proceedings: Innovations, Quality & Outcomes, Vol 5, Iss 2, Pp 480-485 (2021)
The sudden outbreak and global spread of COVID-19 demanded a tremendous amount of attention for viral respiratory infections (VRIs) in modern times. Evidence accumulated over the past few decades increasingly suggests the importance of recognizing th
Externí odkaz:
https://doaj.org/article/301fc8ecb4e64bf99f37300afcec0e32
Autor:
David, Patchett, Michael, Grover, Molly, Kresin, Michael, Bryan, Jon, Nordrum, Matthew, Buras, Susan, Pierce, Kristina, McDaniel
Publikováno v:
The Journal of family practice. 68(6)
This initiative increased patient acceptance of controlled substance agreements and random urine drug screening, and it led many patients to discontinue opioid therapy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3c4d1e8f63e3b8c0d90d83e694e5e83f
https://pubmed.ncbi.nlm.nih.gov/31381628
https://pubmed.ncbi.nlm.nih.gov/31381628
Autor:
Neil R. Wilson, David Patchett, Richard J. H. Morris, Phil Allred, V. Kachkanov, Vishal Shah, Igor P. Dolbnya, Juan Sebastián Reparaz, K. J. S. Sawhney, Gerard Colston, C. M. Sotomayor Torres, Maksym Myronov, Stephen Rhead, John E. Halpin, David R. Leadley, June Finch
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Germanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d50cae2622eff543620e503e2c49be5
https://doi.org/10.1016/j.sse.2014.12.004
https://doi.org/10.1016/j.sse.2014.12.004
Ge1–xSnx epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a suitable explanation for their temperature-dependent photoluminescence (PL) that is based u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7a40278a312e07c8f9e470577ea0b1e
http://hdl.handle.net/10281/149467
http://hdl.handle.net/10281/149467
Publikováno v:
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).
High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e901712a77965ef12ea4f96193cb7fad
https://doi.org/10.1109/istdm.2014.6874654
https://doi.org/10.1109/istdm.2014.6874654
Autor:
Evan H. C. Parker, Igor P. Dolbnya, Andrey Shchepetov, Maksym Myronov, Emigdio Chavez-Angel, John E. Halpin, Mika Prunnila, Peter M. Gammon, C. M. Sotomayor Torres, Vishal Shah, Neil R. Wilson, V. Kachkanov, Francesc Alzina, Phil Allred, David Patchett, Juan Sebastián Reparaz, Markus R. Wagner, M. J. Prest, Rachel S. Edwards, Oksana Trushkevych, Stephen Rhead, Terry E. Whall, David R. Leadley
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Shah, V A, Rhead, S D, Halpin, J E, Trushkevych, O, Chavez-Angel, E, Shchepetov, A, Kachkanov, V, Wilson, N R, Myronov, M & al, E 2014, ' High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry ', Journal of Applied Physics, vol. 115, no. 14, 144307 . https://doi.org/10.1063/1.4870807
Journal of Applied Physics
instname
Shah, V A, Rhead, S D, Halpin, J E, Trushkevych, O, Chavez-Angel, E, Shchepetov, A, Kachkanov, V, Wilson, N R, Myronov, M & al, E 2014, ' High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry ', Journal of Applied Physics, vol. 115, no. 14, 144307 . https://doi.org/10.1063/1.4870807
Journal of Applied Physics
Under the terms of the Creative Commons Attribution (CC BY) license to their work.-- et al.
A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, us
A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4ba62f73a67191267151b6ab743e6a3
http://hdl.handle.net/10261/126922
http://hdl.handle.net/10261/126922
Autor:
Phil Allred, Maksym Myronov, David R. Leadley, V. Kachkanov, Igor P. Dolbnya, C. M. Sotomayor Torres, Vishal Shah, Stephen Rhead, Neil R. Wilson, David Patchett, Juan Sebastián Reparaz, John E. Halpin
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Under the terms of the Creative Commons Attribution (CC BY) license to their work.-- et al.
Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A
Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::543bde3b5b3015b43cdc72e75999b87e
https://doi.org/10.1063/1.4874836
https://doi.org/10.1063/1.4874836