Zobrazeno 1 - 10
of 70
pro vyhledávání: '"David P. Brunco"'
Autor:
B. Moser, Matthew W. Stoker, L. Pantisano, J. B. Johnson, M. Zhao, L. Jang, Dina H. Triyoso, K. D. Seo, E. Kaganer, J. Freeman, U. Rana, S. Raman, R. Krishnan, A. Reznicek, David P. Brunco
Publikováno v:
DRC
For the first time, we present a Super Steep Retrograde Well (SSRW) FinFET process utilizing patterned well implants and Si-based epitaxy channels and compare to a state-of-the-art production technology (14LPP) [1]. This flow offers simpler integrati
Autor:
Roger Loo, K. De Meyer, Geert Eneman, B. De Jaeger, Eddy Simoen, David P. Brunco, Geert Hellings, Marc Meuris, Gang Wang, Matty Caymax, Jerome Mitard, C. Claeys, M.M. Heyns
Publikováno v:
Thin Solid Films. 518:S88-S91
This work gives an overview of recent advances in IMEC's Ge pFET technology. Thin (330 nm) Ge epitaxial layers, selectively grown in Shallow-Trench Isolation (STI)-patterned wafers are presented. These thin layers show a 70% higher area junction leak
Autor:
Eddy Simoen, Geert Hellings, B. De Jaeger, Geert Eneman, David P. Brunco, M.M. Heyns, Marc Meuris, K. De Meyer, Jerome Mitard
Publikováno v:
IEEE Transactions on Electron Devices. 56:3115-3122
This paper is the first to quantify drain extension leakage in a sub-100-nm gate-length bulk germanium technology. Leakage through the transistor's extension/halo junction is shown to be the dominant leakage component in a scaled transistor layout. O
Autor:
Marie-Laure David, David P. Brunco, Brice De Jaeger, Luc Lajaunie, Jerome Mitard, Laurent Souriau, Mireia Bargallo Gonzalez, Eddy Simoen, Gijs Brouwers, Shawn G. Thomas, Frederick Leys, Marc Meuris, Nyles Cody, Geert Eneman, Rui Yang
Publikováno v:
physica status solidi c. 6:1912-1917
The electrical impact of threading dislocations in strained-germanium (s-Ge) grown on a strain-relaxed Si0.2Ge0.8 buffer is investigated by means of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p+n and n+p junctions fabr
Autor:
Karl Opsomer, Anne Lauwers, C. Torregiani, Sofie Mertens, M.J.H. van Dal, David P. Brunco, Caroline Demeurisse, Jorge A. Kittl
Publikováno v:
Materials Science and Engineering: B. :144-154
An overview of silicides and germanides for nano-CMOS applications is presented. The historical evolution describing the migration from the use of Ti silicide to Co silicide to Ni silicide as contacting material is first discussed. These changes in s
Publikováno v:
Materials Science and Engineering: B. :49-55
Germanium receives world-wide a renewed interest due to its strong potential as high-mobility channel material for deep submicron high-performance technologies. Ge processing has been demonstrated to be compatible with Si technology and has the impor
Autor:
Francesca Clemente, Marc Meuris, S. Van Elshocht, Alain Moussa, Alessandra Satta, Laurent Souriau, Matty Caymax, Roger Loo, Valentina Terzieva, David P. Brunco
Publikováno v:
Thin Solid Films. 517:172-177
In the first part of this work we studied the effect of annealing time and temperature on the degree of threading dislocations density (TDD) reduction in epitaxial Ge films grown by CVD on Si. We show, that one-step controlled nitrogen annealing at t
Autor:
Marc Heyns, Roger Loo, Frederik Leys, Marc Meuris, Gang Wang, Matty Caymax, J. Geypen, Wilfried Vandervorst, Laurent Souriau, Hugo Bender, David P. Brunco
Publikováno v:
ECS Transactions. 16:829-836
Ge selective epitaxial growth (SEG) in shallow trench isolated windows is of great interest in advanced devices due to the good lateral electrical isolation of shallow trenches and the possibility of integrating Ge on Si wafers. However, the high den
Autor:
Clement Merckling, David P. Brunco, Julien Penaud, Florence Bellenger, Valeri Afanas'ev, Ruben Lieten, Annelies Delabie, Michel Houssa, Marc Meuris, Andre Stesmans
Publikováno v:
Materials Science in Semiconductor Processing. 11:230-235
The energy band alignment between Ge, HfO 2 and Al 2 O 3 was analyzed as influenced by passivating interlayers (ILs) of different composition (GeO 2 , Ge 3 N 4 , Si/SiO x ). From internal photoemission and photoconductivity experiments we found no IL
Autor:
Gijs Brouwers, Eddy Simoen, B. De Jaeger, Geert Eneman, Marc Meuris, M. Bargallo Gonzalez, Nyles Cody, Laurent Souriau, Shawn G. Thomas, Jerome Mitard, David P. Brunco
Publikováno v:
Materials Science in Semiconductor Processing. 11:364-367
It is shown that the high density of threading dislocations (TDs) and, more specifically, the high density of point defects associated with it and present in our strained Ge epitaxial layers on a Si 0.2 Ge 0.8 relaxed buffer layer degrades the mobili