Zobrazeno 1 - 10
of 11
pro vyhledávání: '"David Onsongo"'
Publikováno v:
Solid-State Electronics. 48:2299-2306
P-channel metal-oxide-semiconductor field-effect-transistors (PMOSFETs) with a Si 1− x Ge x /Si heterostructure channel were fabricated. Peak mobility enhancement of about 41% in Si 1− x Ge x channel PMOSFETs was observed compared to Si channel P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ef236c170ec7f29a5038481f13532f
https://doi.org/10.1016/j.sse.2004.04.016
https://doi.org/10.1016/j.sse.2004.04.016
Publikováno v:
Applied Surface Science. 224:248-253
We report that drive current enhancement and higher mobilities than the universal mobility in compressively strained Si1−xGex on Si surface-channel p-type metal-oxide–semiconductor field-effect-transistors (PMOSFETs) with HfO2 gate dielectric, fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eae71ced8ea0062985cd2b91d193885
https://doi.org/10.1016/j.apsusc.2003.08.110
https://doi.org/10.1016/j.apsusc.2003.08.110
Publikováno v:
Solid-State Electronics. 48:379-387
Si1−yCy alloy layers deposited on (1 0 0) Si form a tensile-strained layer, similar to strained-Si on a relaxed SiGe buffer. We present the results of fabrication of heterojunction metal oxide semiconductor field effect transistor (MOSFET) devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09e5a76205581f7878a3e6e441b1f92d
https://doi.org/10.1016/j.sse.2003.09.003
https://doi.org/10.1016/j.sse.2003.09.003
Publikováno v:
Journal of Electronic Materials. 32:184-190
A nickel silicide process for Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloy materials compatible with Si technology has been developed. Low-resistivity-phase (12–20 µΘ cm) nickel silicides have been obtained for these alloys with different low sheet-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60aaf6d5ec504993911ffb565615adf0
https://doi.org/10.1007/s11664-003-0191-2
https://doi.org/10.1007/s11664-003-0191-2
Publikováno v:
Solid-State Electronics. 44:1223-1228
Deep submicron (0.35 μm) strained Si1−xGex buried channel p-MOSFETs with a Ge concentration up to 50% were simulated using the MEDICI device simulator. A buried channel structure offers several benefits over a surface channel structure without a S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c52ccfcd6f0ec8f378ae62a9dba01df
https://doi.org/10.1016/s0038-1101(00)00031-9
https://doi.org/10.1016/s0038-1101(00)00031-9
Publikováno v:
IEEE Electron Device Letters. 24:34-36
We report for the first time drive current enhancement and higher mobilities than the universal mobility for SiO/sub 2/ on Si in compressively strained Si/sub 1-x/Ge/sub x/-on-Si surface channel PMOSFETs with HfO/sub 2/ gate dielectrics, for gate len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06c55584d3fdaa948c2857f6b188d6a2
https://doi.org/10.1109/led.2002.807020
https://doi.org/10.1109/led.2002.807020
Autor:
Sanjay K. Banerjee, Q. Ouyang, S.K. Jayanarayanan, Xiangdong Chen, Al F. Tasch, David Onsongo
Publikováno v:
Applied Physics Letters. 77:1656-1658
SiGe source heterojunction p-type metal–oxide–semiconductor field-effect transistors (p-MOSFETs) have been used before to suppress the short channel effect for sub-100 nm devices. While the leakage is reduced, the drive current is also reduced du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78531d66b6038e8cfdd787a183bd4917
https://doi.org/10.1063/1.1309018
https://doi.org/10.1063/1.1309018
Publikováno v:
SPIE Proceedings.
The SiGeC ternary alloy seems to be an attractive material system for Si-based device applications, because the incorporation of a small amount of C in the high-mobility SiGe layer offers an additional degree of freedom for tuning the bandgap, band o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8b38bc675fffe676a83598f7a18af5e
https://doi.org/10.1117/12.548006
https://doi.org/10.1117/12.548006
Autor:
Douglas J. Resnick, Grant Willson, David P. Mancini, John G. Ekerdt, Chris J. Mackay, Sidlgata V. Sreenivasan, Sanjay K. Banerjee, David Onsongo, Nicholas A. Stacey, Britain J. Smith, William J. Dauksher, Kevin J. Nordquist, J. P. Donnelly, Todd Bailey
Publikováno v:
SPIE Proceedings.
Step and Flash Imprint Lithography (SFIL) is an alternative lithography technique that enables patterning of sub-100 nm features at a cost that has the potential to be substantially lower than either conventional projection lithography or proposed ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b70ba99ad8605c99823a039aed79335f
https://doi.org/10.1117/12.490142
https://doi.org/10.1117/12.490142
Publikováno v:
MRS Proceedings. 737
Dopants diffusion, activation and pile-up due to rapid thermal annealing of implanted Al and B in a thin (∼200Å) Si cap layer on top of Si1-x-yGexCy layer were studied. Experimental results show that both the lattice strain and differential diffus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::078b4863578625837d49c047e98df530
https://doi.org/10.1557/proc-737-f8.1
https://doi.org/10.1557/proc-737-f8.1