Zobrazeno 1 - 10
of 12
pro vyhledávání: '"David O. Bracher"'
Autor:
David O. Bracher, Takeshi Ohshima, Xingyu Zhang, Hope Lee, Sam L. Bayliss, Hiroshi Abe, Alexandre Bourassa, David D. Awschalom, Christopher P. Anderson, Alexander L. Crook, Kevin C. Miao, Evelyn L. Hu
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e12bf77fab5ad2904764ae69cec69c16
http://arxiv.org/abs/2003.00042
http://arxiv.org/abs/2003.00042
Publikováno v:
Proceedings of the National Academy of Sciences. 114:4060-4065
Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fd5ab811b2f17151b986e45f0bdd137
https://doi.org/10.1073/pnas.1704219114
https://doi.org/10.1073/pnas.1704219114
Autor:
Frithjof Nolting, Michael Horisberger, Tatiana Savchenko, David O. Bracher, Jaianth Vijayakumar, C. A. F. Vaz
In this work we show the presence of a magnetoelectric coupling in silicon-nitride gated Pt/Co/Pt heterostructures using X-ray photoemission electron microscopy (XPEEM). We observe a change in magnetic anisotropy in the form of domain wall nucleation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6511bd12a3959d465674935c630f6488
http://arxiv.org/abs/1905.03082
http://arxiv.org/abs/1905.03082
Autor:
Xingyu Zhang, Rodrick Kuate Defo, Gunn Kim, Efthimios Kaxiras, Evelyn L. Hu, David O. Bracher
Publikováno v:
Physical Review B. 98
Defect engineering in wide-gap semiconductors is important in controlling the performance of single-photon emitter devices. The effective incorporation of defects depends strongly on the ability to control their formation and location, as well as to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4df7a8513f9f8489e2b26149c54c4d3
https://doi.org/10.1103/physrevb.98.104103
https://doi.org/10.1103/physrevb.98.104103
Autor:
David O. Bracher, Evelyn L. Hu
Publikováno v:
Nano Letters. 15:6202-6207
Silicon carbide (SiC) is an intriguing material due to the presence of spin-active point defects in several polytypes, including 4H-SiC. For many quantum information and sensing applications involving such point defects, it is important to couple the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c1b38a27793eff5a27fad29a34f4b91
https://doi.org/10.1021/acs.nanolett.5b02542
https://doi.org/10.1021/acs.nanolett.5b02542
Autor:
Tsung-Li Liu, David O. Bracher, Evelyn L. Hu, Xingyu Zhang, Shanying Cui, Kenichi Ohno, David D. Awschalom, Jonathan J. Lee
Publikováno v:
ACS Photonics. 2:465-469
Optical cavities create regions of high field intensity, which can be used for selective spectral enhancement of emitters such as the nitrogen vacancy center (NV) in diamond. This report discusses a hybrid metal–diamond photonic crystal cavity, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1e2f350e7a00a59ca46e5dfed6e82c
https://doi.org/10.1021/ph500469e
https://doi.org/10.1021/ph500469e
Publikováno v:
Laser & Photonics Reviews. 7:L61-L65
Engineering nanostructures from the bottom up enables the creation of carefully sculpted complex structures that are not accessible via top down fabrication techniques, in particular, complex periodic structures for applications in photonics and sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67f220b45aaa767cd15a22955ab5ffa8
https://doi.org/10.1002/lpor.201300065
https://doi.org/10.1002/lpor.201300065
Autor:
David O. Bracher, Evelyn L. Hu
Publikováno v:
SPIE Proceedings.
A wide band-gap semiconductor with a long history of growth and device fabrication, silicon carbide (SiC) has attracted recent attention for hosting several defects with properties similar to the nitrogen vacancy center in diamond. In the 4H polytype
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d30f1de9c2892ad30c087bffaef93b5
https://doi.org/10.1117/12.2211230
https://doi.org/10.1117/12.2211230
The exquisite mechanical properties of SiC have made it an important industrial material with applications in microelectromechanical devices and high power electronics. Recently, the optical properties of SiC have garnered attention for applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8bd0a61f3d162970054a3f3ad6e8f3d
https://hdl.handle.net/10453/33037
https://hdl.handle.net/10453/33037
Deterministic coupling of delta-doped nitrogen vacancy centers to a nanobeam photonic crystal cavity
Autor:
Kenichi Ohno, Benjamin Aleman, Igor Aharonovich, Claire A. McLellan, Xingyu Zhang, Jonathan C. Lee, David O. Bracher, Andrew P. Magyar, Paolo Andrich, David D. Awschalom, Evelyn L. Hu, Ania Jayich, Shanying Cui, Kasey J. Russell
Publikováno v:
Applied Physics Letters. 105:261101
The negatively charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fe6cc3671d34894681c06c714277cc2
https://doi.org/10.1063/1.4904909
https://doi.org/10.1063/1.4904909