Zobrazeno 1 - 6
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pro vyhledávání: '"David Nijkerk"'
Autor:
A.M. Hoogstrate, R. Henselmans, Folkert Draaisma, Peter Van Doorn, David Nijkerk, Bart van Venrooy
Publikováno v:
International Conference on Space Optics — ICSO 2012.
In this paper, we discuss the two-mirror pushbroom telescope for TROPOMI. Using freeform optics, it has unprecedented resolution. The complete cycle of freeform optical design, analysis, manufacturing, metrology and functional test on a breadboard se
Autor:
Erwin John Van Zwet, Teun C. van den Dool, Jeroen A. Smeltink, David Nijkerk, Wouter D. Koek, Gregor van Baars
Publikováno v:
High-Power Laser Materials Processing: Applications, Diagnostics, and Systems VI.
TNO is developing a High Power Adaptive Mirror (HPAM) to be used in the CO2 laser beam path of an Extreme Ultra- Violet (EUV) light source for next-generation lithography. In this paper we report on a developed methodology, and the necessary simulati
Publikováno v:
Adaptive Optics Systems III, 1-6 July 2012, Amsterdam, The Netherlands, 8447
TNO has developed the Optical Tube Assemblies (OTAs) for the ESO VLT Four Laser Guide Star Facility. The OTAs are Galilean 20x beam expanders, expanding a ∅15 mm input beam (25W, 589 nm CW) to a steerable ∅300 mm output beam. TNO has recently suc
Publikováno v:
Astronomical Adaptive Optics Systems and Applications IV, 21-24 August 2011, San Diego, CA, USA, 8149, 814905-1-814905-7
TNO is developing the Optical Tube Asssemblies (OTAs) for the ESO VLT Four Laser Guide Star Facility. The OTAs are Galilean 20x beam expanders, expanding a Ø15 mm input beam to a steerable Ø300 mm output beam with a wavefront quality requirement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdb8235b626f829c940521d187ef2b21
http://resolver.tudelft.nl/uuid:7c0c03d1-5791-49db-a794-be0bf07523a9
http://resolver.tudelft.nl/uuid:7c0c03d1-5791-49db-a794-be0bf07523a9
Publikováno v:
SPIE Proceedings.
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied to the blank, flood exposed with EUV, and developed. The effect of both phase and reflectivity defects on the reticle is described in terms of a vari
Autor:
Hans Gijsbertsen, Maurits van der Schaar, Stefan Carolus Jacobus Antonius Keij, Giljam Derksen, Patrick W.H. de Jager, David Nijkerk
Publikováno v:
SPIE Proceedings.
The use of backscatter electron detection in a wafer alignment system has been investigated. For certain types of wafer processing such an alignment system might show improved process robustness compared to optical sensors. This expectation is based