Zobrazeno 1 - 10
of 11
pro vyhledávání: '"David Newell Nichols"'
Autor:
Paul Larson, Jeremy Rowlette, Justin Kane, Benjamin Bird, Miles James Weida, Allen Priest, David Newell Nichols, Timothy Day, Edeline Fotheringham, David B. Arnone, David B. Caffey, William B. Chapman
Publikováno v:
High-Speed Biomedical Imaging and Spectroscopy: Toward Big Data Instrumentation and Management II.
The field of infrared spectral imaging and microscopy is advancing rapidly due in large measure to the recent commercialization of the first high-throughput, high-spatial-definition quantum cascade laser (QCL) microscope. Having speed, resolution and
Autor:
Teh-Hsuang Lee, Yung-Rai R. Lee, B.C. Burkey, Charles V. Stancampiano, Georgia R. Torok, James P. Lavine, Eric G. Stevens, R.P. Khosla, David Newell Nichols, Stephen L. Kosman, David L. Losee
Publikováno v:
International Journal of Imaging Systems and Technology. 5:323-329
Two interline, 30 frames/second, high-resolution image sensors are described that use two-phase charge coupled device (CCD) technology. One is a two-megapixel, interlaced high-definition television, sensor, and the other is a 1-megapixel, progressive
Autor:
Eric J. Meisenzahl, Stephen L. Kosman, Thomas R. Pian, Christopher Parks, David Newell Nichols, John P. Mccarten, Douglas A. Carpenter, James A. DiBella, Xueyuan Liu, Robert Kaser
Publikováno v:
SPIE Proceedings.
A new 5.5 mm pixel interline transfer CCD technology platform has been developed that offers significant improvements in performance while retaining the dynamic range, quantum efficiency, and responsivity available from the previous generation 7.4 µ
Autor:
Edmund K. Banghart, David Newell Nichols, Eric G. Stevens, Kwok Y. Wong, John P. Shepherd, Eric J. Meisenzahl
Publikováno v:
Digital Photography
This paper describes the design and performance of two new high-resolution full-frame architecture CCD imaging devices for use in professional color, digital still-imaging applications. These devices are made using 6.8 μm pixels and contain a dual-s
Autor:
Y. Yee, Eric G. Stevens, Timothy J. Tredwell, R.P. Khosla, David Newell Nichols, Teh-Hsuang Lee, David L. Losee, B.C. Burkey
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A 1024*1024 IL CCD (charge coupled device) image sensor has been developed that incorporates antiblooming and electronic exposure control while eliminating lag and obtaining a high responsivity. The incorporation of the antiblooming structure and ele
Autor:
J. Kyan, David Newell Nichols, James P. Lavine, Charles V. Stancampiano, J. B. Russell, William C. McColgin
Publikováno v:
MRS Proceedings. 262
The effects of intentional metal contamination on silicon charge-coupled device imagers are reported. Such imagers are both sensitive to and provide sensitive measures of the presence of metals in the fabrication process. High-purity iron, cobalt, ni
Autor:
Y. Yee, Tom H. Lee, B.C. Burkey, David L. Losee, R.P. Khosla, Eric G. Stevens, David Newell Nichols
Publikováno v:
Charge-Coupled Devices and Solid State Optical Sensors.
A 1024 x 1024 pixel, interline charge-coupled device (IL CCD) image sensor has been developed that incorporates antiblooming and electronic exposure control while eliminating lag and obtaining a high responsivity. Of the novel features of this device
Autor:
Constantine N. Anagnostopoulos, Edward T. Nelson, James P. Lavine, David Newell Nichols, Kwok Y. Wong
Publikováno v:
IEEE Journal of Solid-State Circuits. 19:91-97
Internal gettering can be used to reduce crosstalk in imagers and latchup susceptibility in CMOS circuits. The internal gettering process forms defects in the bulk of the silicon wafers that are effective recombination sites for minority carriers in
Autor:
K.Y. Wong, Edward T. Nelson, Constantine N. Anagnostopoulos, James P. Lavine, David Newell Nichols
Publikováno v:
IEEE Transactions on Electron Devices. 31:225-231
Internal gettering can be used to reduce crosstalk in imagers and latch-up susceptibility in CMOS circuits. The internal gettering process forms defects in the bulk of the silicon wafers that are effective recombination sites for minority carriers in
Publikováno v:
SMPTE Journal. 96:1186-1188
Un capteur perfectionne a base de dispositifs a couplage de charge sur la totalite du cadre, capable de donner une image de 1,4 megapixels, est mis au point pour les applications industrielles et scientifiques. Ce capteur, utilise dans la camera de t