Zobrazeno 1 - 10
of 15
pro vyhledávání: '"David N. Tomes"'
Autor:
Larry F. Thompson, Gary N. Taylor, Janet M. Kometani, J. E. Hanson, Elsa Reichmanis, W. W. Tai, Anthony E. Novembre, Omkaram Nalamasu, David N. Tomes
Publikováno v:
Microelectronic Engineering. 17:257-260
The x-ray (λ = 0.8,1.4nm) and deep UV (λ = 248nm) responses of copolymers of TBS and SO 2 are described. Resist sensitivity is shown to improve by addition of an arylmethyl sulfone acid generating species to the formulation, partial deprotection of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::780246609fd4ed1d4f6f0288f18b796c
https://doi.org/10.1016/0167-9317(92)90051-r
https://doi.org/10.1016/0167-9317(92)90051-r
Publikováno v:
SPIE Proceedings.
A novel single-layer Rohm and Hass SPR220 lift-off processes with oxidation step in a double-cycle develop is introduced to offer promising lift-off profiles. First, the coated wafer uses a typical Pre-soak process before exposure to introduce an inh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9febe2834853f24ef23c90307b91ff1d
https://doi.org/10.1117/12.599176
https://doi.org/10.1117/12.599176
Autor:
Pasquale R. Valerio, Jacque H. Georger, Michael F. Cronin, David N. Tomes, Joseph Lachowski, Mike Mori, Larry Bachetti, Kim Wynja, Patricia Fallon
Publikováno v:
SPIE Proceedings.
As the semiconductor industry continues to follow Moore's Law by continually shrinking linewidths, DUV lithographic capacity is increasing. This greater capacity has increased the use of 248nm DUV lithography for all levels particularly applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f1b5efb3771243d93c5a4651a8156eb
https://doi.org/10.1117/12.436893
https://doi.org/10.1117/12.436893
Autor:
A. Kornblit, William M. Mansfield, Gee E. Rittenhouse, David N. Tomes, George K. Celler, Raymond A. Cirelli, J. Frackoviak
Publikováno v:
SPIE Proceedings.
As transistor features shrink into the deep submicron range, a corresponding reduction in the optical wavelength used to pattern such features has also continued. Currently, advanced optical steppers found in ULSI production applications operate at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdf18b9225e6b58cb9868b073c453d9b
https://doi.org/10.1117/12.209191
https://doi.org/10.1117/12.209191
Autor:
Anthony E. Novembre, George K. Celler, David N. Tomes, Jerry Z. Y. Guo, J. Frackoviak, Joseph A. Abate, Allen G. Timko, Herschel Maclyn Marchman
Publikováno v:
SPIE Proceedings.
In this paper, the effect of resist contrast on the exposure latitude, printing bias, and dark erosion are discussed in the context of proximity x-ray lithography. Positive chemically amplified resists are studied. Both experimental and simulation re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c806d774a78881bb5c55fe92589aa5
https://doi.org/10.1117/12.209180
https://doi.org/10.1117/12.209180
Autor:
David N. Tomes, Anthony E. Novembre, J. Frackoviak, L. E. Trimble, George K. Celler, Charles W. Jurgensen, R. R. Kola
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
The Hampshire Instruments Model 5000 Stepper is a commercially available laser based 1:1 proximity x-ray stepper. The source of this system is a 25 watt Nd:glass slab laser which is focused to approximately 200 micrometers diameter spot on an iron al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b48677a104252ce4c962592187449b
https://doi.org/10.1117/12.146508
https://doi.org/10.1117/12.146508
Autor:
R. R. Kola, Larry F. Thompson, Charles W. Jurgensen, David N. Tomes, Richard R. Freeman, J. Frackoviak, George K. Celler, L. E. Trimble, Anthony E. Novembre
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
Preliminary evaluation of a 1:1 proximity x-ray stepper, built by Hampshire Instruments is discussed here. This stepper, model 5000P, is the first commercial system that uses a laser- generated plasma x-ray source. It was extensively tested at the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b91b9fd1f8711c09bf15cf86cf464d96
https://doi.org/10.1117/12.136015
https://doi.org/10.1117/12.136015
Autor:
Elsa Reichmanis, Larry F. Thompson, J. E. Hanson, Anthony E. Novembre, W. W. Tai, Gary N. Taylor, Omkaram Nalamasu, David N. Tomes, Janet M. Kometani
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3338
Poly(4‐tert‐butoxycarbonyloxystyrene‐co‐sulfur dioxide) PTBSS has been found to act as a sensitive x‐ray (λ=1.4 nm) and weakly sensitive deep ultraviolet (λ=248 nm) chemically amplified, aqueous base soluble positive acting resist. Improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ef47a3effa64e9c1c2d84ef70d585d8
https://doi.org/10.1116/1.585338
https://doi.org/10.1116/1.585338
Autor:
W. W. Tai, Anthony E. Novembre, Larry F. Thompson, David N. Tomes, Richard R. Freeman, Charles W. Jurgensen, L. E. Trimble, R. R. Kola, J. Frackoviak, George K. Celler
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3198
This paper reports on the initial lithographic evaluation of a commercial 1:1 proximity stepper that uses a laser‐based plasma x‐ray source. Our preliminary tests have shown that 0.4‐ and 0.5‐μm lines and spaces can be printed consistently o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38e519dbc72157dee3f286706ceb2c4
https://doi.org/10.1116/1.585286
https://doi.org/10.1116/1.585286
Publikováno v:
SPIE Proceedings.
Preliminary testing results for a new, commercially available soft x-ray proximity stepper are presented. Total system performance (i.e., overlay preci sion, alignment precision, and critical dimension control) is under investiga tion using elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9965f1a777e92ca229ab20fb1371f497
https://doi.org/10.1117/12.968525
https://doi.org/10.1117/12.968525