Zobrazeno 1 - 6
of 6
pro vyhledávání: '"David Mellenthin"'
Autor:
Kenneth M. Kramer, David Mellenthin, Kevin Rentzsch, Tim Hostetler, James E. Ellenson, Susan S. MacDonald, Ron Enck
Publikováno v:
SPIE Proceedings.
Increasing numbers of MEMS, photonic, and integrated circuit manufacturers are investigating the use of Nano-imprint Lithography or Step and Flash Imprint Lithography (SFIL) as a lithography choice for making various devices and products. Their main
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d4005dbfc3fdab640422d18f9a35fa
https://doi.org/10.1117/12.632269
https://doi.org/10.1117/12.632269
Autor:
Curt Jackson, Cris Morgante, Paul C. Allen, John Manfredo, Peter D. Buck, Robert Kiefer, Vishal Garg, David Mellenthin, Jason Hickethier, Michael White, Sarah Cohen, Eric R. Christenson
Publikováno v:
SPIE Proceedings.
Currently, the ALTA 4300 generation DUV Laser tool is capable of printing critical and semi-critical photomasks for the 130nm and 90nm IC technology nodes. With improved optical elements, an improved objective lens, and a higher bandwidth data-path t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::609ac3c9363e404e611eb2ddf625b124
https://doi.org/10.1117/12.617524
https://doi.org/10.1117/12.617524
Autor:
Vishal Garg, Curt Jackson, John Manfredo, David Mellenthin, Cris Morgante, Sarah Cohen, Robert Kiefer, Michael White, Peter D. Buck, Paul C. Allen
Publikováno v:
Optical Microlithography XVIII.
Currently, the ALTA ® 4300 generation DUV Laser system is capable of printing critical and semi-critical photomasks for the 130nm and 90nm IC technology nodes. With improved optical elements, an improved objective lens, and a higher bandwidth datapa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a162ef2a28b7cf8be92ba31ac92da5
https://doi.org/10.1117/12.600368
https://doi.org/10.1117/12.600368
Autor:
Gidi Gottlieb, Susan S. MacDonald, L. Jeff Myron, Greg P. Hughes, Liraz Gershtein, Kevin Rentzsch, Andrew Griffiths, Bob Burkhardt, David Mellenthin
Publikováno v:
SPIE Proceedings.
Lithography costs for IC production at resolutions of 65-nm and beyond have grown exponentially for each technology node and show no sign of slowing. Step and Flash Imprint Lithography (S-FIL), developed at the University of Texas (UT) uniquely offer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1527d14f20dd2ab8378d2bb7fe75e543
https://doi.org/10.1117/12.603718
https://doi.org/10.1117/12.603718
Autor:
Patrick Montgomery, John Maltabes, Lloyd C. Litt, Kevin D. Lucas, Erika Schaefer, Robert John Socha, Laurent Dieu, David Mellenthin, Jan Pieter Kuijten, Wil Pijnenburg, Gregory P. Hughes, Shawn Cassel, Eric L. Fanucchi, Kurt E. Wampler, Will Conley, Linda Yu, Arjan Verhappen, Geert Vandenberghe, Vincent Wiaux
Publikováno v:
SPIE Proceedings.
Contact patterning for the 65nm device generation will be an exceedingly difficult task. The 2001 SIA roadmap lists the targeted contact size as 90nm with +/-10% CD control requirements of +/-9nm. Defectivity levels must also be below one failure per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a302218c17a2481c2cd74425644593ce
https://doi.org/10.1117/12.485499
https://doi.org/10.1117/12.485499
Autor:
Jan-Pieter Kiujten, Robert John Socha, Lloyd C. Litt, Greg P. Hughes, Arjan Verhappen, Eric L. Fanucchi, Laurent Dieu, Will Conley, David Mellenthin, Kevin D. Lucas, John Maltabes, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturers are increasingly focusing on contact and via layers as the most difficult lithography pattern. Focus and exposure latitude, MEF, as well as iso-dense bias are challenges for contact patterning. This situation is only expec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4db9090fa53950483dd1aeca51f0f5d
https://doi.org/10.1117/12.467783
https://doi.org/10.1117/12.467783