Zobrazeno 1 - 10
of 76
pro vyhledávání: '"David M. Gill"'
Publikováno v:
Advances in Radiation Oncology, Vol 6, Iss 4, Pp 100689- (2021)
Externí odkaz:
https://doaj.org/article/4b10f6e26a9f494a89ee8fb43a498e8b
Autor:
David D Stenehjem, Andrew W Hahn, David M Gill, Daniel Albertson, Banumathy Gowrishankar, Joseph Merriman, Archana M Agarwal, Venkata Thodima, Erik B Harrington, Trang H Au, Benjamin L Maughan, Jane Houldsworth, Sumanta K Pal, Neeraj Agarwal
Publikováno v:
PLoS ONE, Vol 14, Iss 1, p e0210415 (2019)
BACKGROUND:First-line treatment for metastatic renal cell carcinoma (mRCC) is rapidly changing. It currently includes VEGF targeted therapies (TT), multi-target tyrosine kinase inhibitors (TKIs), mTOR inhibitors, and immunotherapy. To optimize outcom
Externí odkaz:
https://doaj.org/article/772ff832c27e41e58c93b091941976b8
Autor:
Andrew W, Hahn, David M, Gill, Austin, Poole, Roberto H, Nussenzveig, Sara, Wilson, James M, Farnham, Robert A, Stephenson, Lisa A, Cannon-Albright, Benjamin L, Maughan, Neeraj, Agarwal
Publikováno v:
Molecular cancer therapeutics. 18(3)
There are many treatment options available for men with metastatic castration-resistant prostate cancer (mCRPC). Yet, biomarkers predictive of differential response to treatment are currently unavailable. A recent translational study suggested that
Autor:
David M. Gill
Publikováno v:
The Ecumenical Review. 51:381-385
Autor:
Parvez N. Uppal, Brian C. Campbell, Paul F. Baldasaro, Stefan P. Svensson, David M. Gill, S. Loughin, Greg W. Charache
Publikováno v:
Journal of Crystal Growth. :877-882
This paper reports recent progress in the development of quaternary III–V thermophotovoltaic (TPV) devices based on MBE grown Ga x In 1− x As y Sb 1− y . TPV is of great interest for a variety of applications (1st and 2nd NREL Conf. on Thermoph
Publikováno v:
Journal of Applied Physics. 81:1422-1426
We present results of photoluminescence studies of Al0.5Ga0.5As1−xSbx grown by molecular beam epitaxy on GaAs substrates. We compared the photoluminescence (PL) peak position as a function of composition with the band gap prediction using the estab
Autor:
Kelvin Felix, David M. Gill
Publikováno v:
The Ecumenical Review. 45:299-303
Autor:
David M. Gill
Publikováno v:
The Ecumenical Review. 43:43-49
Publikováno v:
IEEE Electron Device Letters. 17:328-330
This letter describes the material characterization and device test of InAlAs/InGaAs high electron mobility transistors (HEMTs) grown on GaAs substrates with indium compositions and performance comparable to InP-based devices. This technology demonst
G(3, m, n) is the group presented by $$\langle a,b|a^5 = (ab)^2 = b^{m + 3} a^{ - n} b^m a^{ - n} = 1\rangle $$ . In this paper, we study the structure of G(3, m, n). We also give a new efficient presentation for the Projective Special Linear group P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e190132c18bbce4176f16c333d1ec32f
https://hdl.handle.net/20.500.12605/7723
https://hdl.handle.net/20.500.12605/7723