Zobrazeno 1 - 10
of 54
pro vyhledávání: '"David M. Binkley"'
Publikováno v:
Journal of Low Power Electronics. 2:259-270
Publikováno v:
Analog Integrated Circuits and Signal Processing. 47:137-163
This paper describes a methodology for selecting drain current, inversion level (represented by inversion coefficient), and channel length for optimum performance tradeoffs in analog CMOS design. Here, inversion coefficient replaces width as a design
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3788-3794
Total dose and single-event radiation hardness, and operation over extreme temperatures make silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) processes leading contenders for space applications. This paper reports noise degra
Autor:
J.M. Rochelle, Benjamin J. Blalock, David M. Binkley, K.M. Baldwin, E. Breeding, B.K. Swann, L.G. Clonts
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:1839-1852
An integrated CMOS subnanosecond time-to-digital converter (TDC) has been developed and evaluated for positron emission tomography (PET) front-end applications. The TDC architecture combines an accurate digital counter and an analog time interpolatio
Autor:
J.C. Moyers, M.S. Musrock, John E. Breeding, Michael E. Casey, J.M. Rochelle, S.C. Terry, B.S. Puckett, J. Young, B.K. Swann, David M. Binkley, Benjamin J. Blalock
Publikováno v:
IEEE Transactions on Nuclear Science. 50:909-914
A custom mixed-signal CMOS integrated circuit has been developed for high performance positron emission tomography (PET) front-end applications. The application specific integrated circuit (ASIC) contains four differential variable-gain constant band
Publikováno v:
IEEE Transactions on Nuclear Science. 50:915-920
Design requirements for high-density detector front-ends and other high-performance analog systems routinely force designers to operate devices in moderate inversion. However, CMOS models have traditionally not handled this operating region very well
Autor:
B.D. Williamson, Milton Nance Ericson, J.M. Rochelle, Alan L. Wintenberg, Benjamin J. Blalock, David M. Binkley, C.L. Britton
Publikováno v:
IEEE Transactions on Nuclear Science. 50:963-968
This paper presents a summary of the measured noise behavior of CMOS MOSFETs fabricated in the Peregrine 0.5 /spl mu/m fully depleted (FD) silicon-on-sapphire (SOS) process. SOS CMOS technology provides an alternative to standard bulk CMOS processes
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 504:143-148
The timing performance of a detector designed for application in positron emission tomography (PET) directly effects image noise in the form of random events. The application of avalanche photodiodes in a PET scintillation detector requires careful a
Autor:
T. Johnson, L. Del Castillo, M. Mojarradi, Benjamin J. Blalock, N. Ulshoefer, David M. Binkley, Richard A. Andersen
Publikováno v:
IEEE Transactions on Neural Systems and Rehabilitation Engineering. 11:38-42
This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanical system (MEMS) electrode array, front-end complement
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 22:225-237
A computer-aided design (CAD) methodology for optimizing MOS transistor current and sizing is presented where drain current ID, inversion level (represented by inversion coefficient IC), and channel length L are selected as three independent degrees