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of 8
pro vyhledávání: '"David Lynall"'
Publikováno v:
Sensors, Vol 17, Iss 7, p 1640 (2017)
Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of
Externí odkaz:
https://doaj.org/article/64506d5f2b9941bd8a3526ff40b05917
Autor:
Jakub Jadwiszczak, Jeffrey Sherman, David Lynall, Yang Liu, Boyan Penkov, Erik Young, Rachael Keneipp, Marija Drndić, James C. Hone, Kenneth L. Shepard
Publikováno v:
ACS Nano
Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f6b842a056eec403689cab5861b1f14
https://europepmc.org/articles/PMC9526797/
https://europepmc.org/articles/PMC9526797/
Autor:
Igor G. Savelyev, Marina Blumin, Harry E. Ruda, Zhiming Wang, Selvakumar V. Nair, David Lynall, Shiliang Wang, Alex C. Tseng
Publikováno v:
ACS nano. 14(1)
Much recent attention has been focused on the development of field-effect transistors based on low-dimensional nanostructures for the detection and manipulation of molecules. Because of their extraordinarily high charge sensitivity, InAs nanowires pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7e40b25b92716ccc4f5fd63bf41cfb3
https://pubmed.ncbi.nlm.nih.gov/31904218
https://pubmed.ncbi.nlm.nih.gov/31904218
Autor:
Marina Blumin, Shiliang Wang, Igor G. Savelyev, Alex C. Tseng, David Lynall, Harry E. Ruda, Toshiya Sakata, Kensuke Ito
Publikováno v:
Sensors and Actuators B: Chemical. 336:129704
Trapping of environmental charges in surface states typically dominates electrical transport in nanostructured field-effect transistors (FETs) applied as sensors. Such surface effects produce exceptional sensitivity, yet time dependencies on experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22dc481714273981d783acb0487dae7c
https://doi.org/10.1016/j.snb.2021.129704
https://doi.org/10.1016/j.snb.2021.129704
Publikováno v:
Nano Letters. 16:6028-6035
Because of the continued scaling of transistor dimensions and incorporation of nanostructured materials into modern electronic and optoelectronic devices, surfaces and interfaces have become a dominant factor dictating material properties and device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f316bb651e01e899644bdcbc0f0f4969
https://doi.org/10.1021/acs.nanolett.6b01800
https://doi.org/10.1021/acs.nanolett.6b01800
Autor:
David Lynall, Marina Blumin, Igor G. Savelyev, Harry E. Ruda, A. Shik, Selvakumar V. Nair, David Gutstein
Publikováno v:
Nano letters. 18(2)
Because of their high aspect ratio, nanostructures are particularly susceptible to effects from surfaces such as slow electron trapping by surface states. However, nonequilibrium trapping dynamics have been largely overlooked when considering transpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e079af7d4a0230fcb05e07639d8e5b50
https://pubmed.ncbi.nlm.nih.gov/29345949
https://pubmed.ncbi.nlm.nih.gov/29345949
Autor:
Selvakumar V. Nair, David Gutstein, Marina Blumin, Igor G. Savelyev, Harry E. Ruda, Daniele Ercolani, David Lynall
Publikováno v:
Nano letters (Online) 18 (2018): 124–129. doi:10.1021/acs.nanolett.7b03620
info:cnr-pdr/source/autori:Gutstein D.; Lynall D.; Nair S.V.; Savelyev I.; Blumin M.; Ercolani D.; Ruda H.E./titolo:Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires/doi:10.1021%2Facs.nanolett.7b03620/rivista:Nano letters (Online)/anno:2018/pagina_da:124/pagina_a:129/intervallo_pagine:124–129/volume:18
info:cnr-pdr/source/autori:Gutstein D.; Lynall D.; Nair S.V.; Savelyev I.; Blumin M.; Ercolani D.; Ruda H.E./titolo:Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires/doi:10.1021%2Facs.nanolett.7b03620/rivista:Nano letters (Online)/anno:2018/pagina_da:124/pagina_a:129/intervallo_pagine:124–129/volume:18
The conductance of semiconductor nanowires is strongly dependent on their electrostatic history because of the overwhelming influence of charged surface and interface states on electron confinement and scattering. We show that InAs nanowire field-eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b147f068ed55febebe6d7b6b87695abe
https://pubmed.ncbi.nlm.nih.gov/29216432
https://pubmed.ncbi.nlm.nih.gov/29216432
Publikováno v:
Sensors, Vol 17, Iss 7, p 1640 (2017)
Sensors (Basel, Switzerland)
Sensors; Volume 17; Issue 7; Pages: 1640
Sensors (Basel, Switzerland)
Sensors; Volume 17; Issue 7; Pages: 1640
Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::771d02e11792167f023987ecf99c1ebe
https://www.mdpi.com/1424-8220/17/7/1640
https://www.mdpi.com/1424-8220/17/7/1640