Zobrazeno 1 - 10
of 92
pro vyhledávání: '"David Lombardo"'
Publikováno v:
APL Photonics, Vol 2, Iss 2, Pp 026102-026102-7 (2017)
We employ the process of non-degenerate four-wave mixing Bragg scattering to demonstrate all-optical control in a silicon platform. In our configuration, a strong, non-information-carrying pump is mixed with a weak control pump and an input signal
Externí odkaz:
https://doaj.org/article/cbd17312c4e84da483b038b7141fe183
Autor:
David Lombardo, Jay Mathews, Yun Zhao, John Kouvetakis, Imad Agha, Zairui Li, James Gallagher, Jose Menendez
Publikováno v:
2018 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the pe
Publikováno v:
Optics Express. 27:22917
Interference Lithography (IL) is a powerful and inexpensive tool for large area precision nanoscale patterning of periodic structures. In this work we extend IL's capability to create features in arbitrary shapes and locations through the use of bina
Publikováno v:
Conference on Lasers and Electro-Optics.
We experimentally demonstrate a transistor-like all-optical logic gate in a silicon waveguide via four-wave mixing Bragg scattering, and evaluate the eye diagrams using pseudorandom data.
Publikováno v:
Frontiers in Optics 2017.
Publikováno v:
Optics letters. 41(15)
We demonstrate controlled wavelength conversion on a silicon chip based on four-wave mixing Bragg scattering (FWM-BS). A total conversion efficiency of 5% is achieved with strongly unbalanced pumps and a controlling peak power of 55 mW, while the eff
Publikováno v:
SPIE Proceedings.
Pixelated wiregrids are of great interest in polarimetric imagers, but there are no straightforward methods available for combining the uniform exposures of laser interference with a masking system to achieve pixels at different rotational angles. In
Autor:
Zairui Li, Jay Mathews, Yun Zhao, James Dennis Gallagher, David Lombardo, Imad Agha, John Kouvetakis, Jose Menendez
Publikováno v:
ECS Meeting Abstracts. :1034-1034
The successful epitaxial growth of Ge-on-Si has opened a new gateway for Si-based laser research. Ge is not a direct band gap material, however it possible to induce Ge towards direct band emission due to the small band gap energy differences between
Publikováno v:
APL Photonics, Vol 2, Iss 2, Pp 026102-026102-7 (2017)
We employ the process of non-degenerate four-wave mixing Bragg scattering (FWM-BS) to demonstrate all-optical control in a silicon platform. In our configuration, a strong, non-information-carrying pump is mixed with a weak control pump and an input
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::444b25d50d073f06e95f71d5a170ef23